BC238

DC COMPONENTS CO., LTD. R BC238 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of audio amplifiers. TO-92 Pinning 1 = Collector 2 = Base 3 = Emitter .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC PD TJ TSTG Rating 30 25 5 100 350 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCES BVCEO BVEBO ICES (1) Min 30 25 5 0.55 180 150 2% Typ - Max 15 0.2 0.8 1.05 0.83 0.7 800 4.5 Unit V V V nA V V V V V MHz pF Test Conditions IC=100µA, VEB=0 IC=2mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=2mA, VCE=5V IC=2mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, IE=0, f=1MHz Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on) hFE fT Cob 380µs, Duty Cycle Classification of hFE2 Rank Range B 180~460 C 300~800