DC COMPONENTS CO., LTD.
R
BC337
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for driver and output stage of audio amplifiers.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Pinning
1 = Collector 2 = Base 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 50 45 5 800 625 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO
(1)
Min 50 45 5 100 40 2%
Typ 210 4
Max 0.1 0.7 1.2 630 -
Unit V V V µA V V MHz pF
Test Conditions IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=45V, IE=0 IC=500mA, IB=50mA IC=300mA, VCE=1V IC=100mA, VCE=1V IC=300mA, VCE=1V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain
(1) (1)
VCE(sat) VBE(on) hFE1 hFE2 fT Cob
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
380µs, Duty Cycle
Classification of hFE1
Rank Range 16 100~250 25 160~400 40 250~630
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