BC556

DC COMPONENTS CO., LTD. R BC556 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of audio amplifiers. TO-92 Pinning 1 = Collector 2 = Base 3 = Emitter .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -80 -65 -5 -100 500 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO (1) Min -80 -65 -5 -600 75 2% Typ 300 4.5 Max 15 -300 -650 -750 -820 500 - Unit V V V nA mV mV mV mV MHz pF Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) VCE(sat)1 VCE(sat)2 VBE(on)1 VBE(on)2 hFE fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle Classification of hFE Rank Range A 75~250 B 180~500