DC COMPONENTS CO., LTD.
R
BC557
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of audio amplifiers.
TO-92
Pinning
1 = Collector 2 = Base 3 = Emitter
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -50 -45 -5 -100 500 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
C C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min -50 -45 -5 -600 75 2%
Typ 300 4.5
Max -0.1 -1 -300 -650 -750 -820 800 -
Unit V V V µA µA mV mV mV mV MHz pF
Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-20V VEB=-5V IC=-10mA, IB=-1mA IC=-100mA, IB=-10mA IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V IC=-2mA, VCB=-5V IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain
(1)
VCE(sat)1 VCE(sat)2 VBE(on)1 VBE(on)2 hFE fT Cob
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
380µs, Duty Cycle
Classification of hFE
Rank Range
A
75~260
B
220~500
C
420~800
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