BC635

DC COMPONENTS CO., LTD. R BC635 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC PD TJ TSTG Rating 45 45 5 1 1 +150 -55 to +150 Unit V V V A W o o 321 .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCEO BVEBO ICBO IEBO (1) Min 45 5 25 40 25 2% Typ 100 Max 0.1 0.1 0.5 1 250 - Unit V V µA µA V V MHz Test Conditions IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 IC=500mA, IB=50mA IC=500mA, VCE=2V IC=5mA, VCE=2V IC=150mA, VCE=2V IC=500mA, VCE=2V IC=10mA, VCE=5V, f=50MHz VCE(sat) VBE(on) hFE1 hFE2 hFE3 fT Transition Frequency (1)Pulse Test: Pulse Width 380µs, Duty Cycle