BC808

DC COMPONENTS CO., LTD. R BC808 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in drive and output stages of audio amplifiers. .020(0.50) .012(0.30) SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC PD TJ TSTG Rating -30 -25 -5 -500 225 +150 -55 to +150 Unit V V V mA mW o o .026(0.65) .010(0.25) .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .0043(0.11) .0035(0.09) .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCES BVCEO BVEBO ICBO IEBO (1) Min -30 -25 -5 100 2% Typ 100 - Max -0.1 -0.1 -0.7 -1.2 600 8 Unit V V V µA µA V V MHz pF Test Conditions IC=-10µA IC=-10mA IE=-1µA VCB=-20V VEB=-4V IC=-500mA, IB=-50mA IC=-300mA, VCE=-1V IC=-100mA, VCE=-1V IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz, IE=0 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) VCE(sat) VBE(on) hFE fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle Classification of hFE Rank Range 16 100~250 25 160~400 40 250~600