BC849

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS BC848 BC849 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 1 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 30 30 5 100 225 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .118(3.00) .110(2.80) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) .045(1.15) .034(0.85) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO (1) Min 30 30 5 0.58 110 200 100 2% Typ 0.2 0.7 0.9 3.5 - Max 15 0.25 0.6 0.7 800 800 6 10 4 Unit V V V nA V V V V V MHz pF dB Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=2mA, VCE=5V IC=2mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz VCE=5V, IC=200µA, f=1KHz, RS=2KΩ, B=200Hz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Volatge Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance Noise Figure (1)Pulse Test: Pulse Width BC848 BC848 BC849 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on) hFE fT Cob BC849 380µs, Duty Cycle NF Classification of hFE Rank Range A 110~220 B 200~450 C 420~800