BD237D

DC COMPONENTS CO., LTD. R BD237D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for medium power linear and switching applications. TO-126ML Pinning 1 = Emitter 2 = Collector 3 = Base .148(3.75) .138(3.50) .163(4.12) .153(3.87) .044(1.12) .034(0.87) .060(1.52) .050(1.27) .146(3.70) .136(3.44) .123(3.12) .113(2.87) Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (peak) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o o C) Rating 100 80 5 2 6 25 +150 -55 to +150 Unit V V V A A W o o .300(7.62) .290(7.37) 123 .084(2.12) .074(1.87) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .180 Typ (4.56) .090 Typ (2.28) Dimensions in inches and (millimeters) .084(2.14) .074(1.88) Symbol VCBO VCEO VEBO IC IC PD TJ TSTG .591(15.0) .551(14.0) .027(0.69) .017(0.43) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 100 80 5 40 25 3 Typ - Max 0.1 1 0.6 1.3 - Unit V V V mA mA V V IC=1mA Test Conditions IC=100mA IE=100µA VCB=100V VEB=5V IC=1A, IB=0.1A IC=1A, VCE=2V IC=150mA, VCE=2V IC=1A, VCE=2V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width (1) VCE(sat) VBE(on) hFE1 hFE2 fT MHz IC=250mA, VCE=10V, f=100MHz 380µs, Duty Cycle 2%