IRF630

DC COMPONENTS CO., LTD. IRF630 R DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS(ON) = 0.4 Ohm ID = 9.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements TO-220AB .185(4.70) .173(4.40) .055(1.39) .045(1.15) .295(7.49) .220(5.58) Description Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. .151 Typ (3.83) .405(10.28) .380(9.66) Pinning 1 = Gate 2 = Drain 3 = Source .625(15.87) .570(14.48) .350(8.90) .330(8.38) 1 2 3 .640 Typ (16.25) Symbol D .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) G Dimensions in inches and (millimeters) S N-Channel MOSFET Absolute Maximum Ratings Characteristic Drain Current @ TC=25oC Gate-to-Source Voltage Total Power Dissipation @ TC=25oC Derate above 25oC Operating Junction Temperature Storage Temperature Maximum Lead Temperature for Soldering Purposes, 1/8" from Case for 10 Seconds Continuous Pulsed Symbol ID IDM VGS PD TJ TSTG TL Rating 9.0 36 20 74 0.59 -55 to +150 -55 to +150 300 Unit A V W W/oC o o o C C C IRF630 N-Channel Power MOSFET Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Forward Leakage Current Gate-Source Reverse Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance Internal Source Inductance Diode Forward Voltage Reverse Recovery Time Forward Turn-On Time Thermal Resistance (TJ = 25oC unless otherwise specified) Symbol V(BR)DSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS VSD trr ton Min 200 2.0 3.8 Typ 800 240 76 9.4 28 39 20 4.5 7.5 170 Max 25 250 100 -100 4.0 0.4 43 7.0 23 2.0 340 1.7 62 nH nH V ns Measured from the drain lead 0.25" from package to center of die Measured from the source lead 0.25" from package to source bond pad IS=9.0A, VGS=0V(Note) IF=5.9A, di/dt=100A/µs(Note) nC VDS=160V, ID=5.9A, VGS=10V(Note) ns VDD=100V, ID=5.9A, RG=12Ω , RD=16Ω(Note) pF VDS=25V, VGS=0V, f=1.0MHz nA V Ω S Unit V µA Test Conditions VGS=0V, ID=250µA VDS=200V, VGS=0V VDS=160V, VGS=0V, TJ=125oC VGSF=20V, VDS=0V VGSR=-20V, VDS=0V VDS=VGS, ID=250µA VGS=10V, ID=5.4A(Note) VDS=50V, ID=5.4A(Note) Intrinsic turn-on time is neglegible and dominated by inductance LS+LD o Junction to Case Junction to Ambient 300µs, Duty Cycle RθJC RθJA 2% C/W - Note: Pulse Test: Pulse Width DC COMPONENTS CO., LTD. R