MML1225

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MML1225 MXL1225 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices. They are intended for low cost, high volume applications. SOT-89 .063(1.60) .055(1.40) Pinning 1 = Gate 2 = Anode 3 = Cathode .066(1.70) .059(1.50) Absolute Maximum Ratings(TA=25 Characteristic Peak Repetitive Off-State Voltage(RGK=1KΩ) Peak Gate Current(10µs Max) Gate Power Dissipation(20ms Max) Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature MML1225 MXL1225 VDRM o C) Rating 300 380 0.8 1 0.1 8 -40 to +125 -40 to +125 Unit V A A W V o o .167(4.25) .159(4.05) 1 2 3 .102(2.60) .095(2.40) Symbol .020(0.51) .014(0.36) On-State RMS Current(TC=40oC) IT(RMS) IGM PG(AV) VGRM TJ TSTG .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic Peak Repetitive Forward Off-State Blocking Current Peak Forward On-State Voltage Continuous DC Gate Trigger Current Continuous DC Gate Trigger Voltage DC Holding Current DC Latching Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol TA=25oC TA=125oC IDRM Min VTM IGT VGT IH IL dv/dt di/dt Tgd RθJC 25 30 100 Typ Max 5 100 1.4 2.2 200 0.8 5 6 0.5 V µA V mA mA V/µS A/µS µsec o Unit µA Test Conditions VAK=Rated VDRM or VRRM RGK=1KΩ ITM=0.4A Peak, TJ=25oC ITM=0.8A Peak, TJ=25oC VAK=7V DC, RL=100Ω VAK=7V DC, RL=100Ω RGK=1KΩ, Gate Open RGK=1KΩ, Gate Open VD=0.67VDRM, RGK=1KΩ, TJ=125oC IG=10mA, diG/dt=0.1A/µS, TJ=125oC IG=10mA, diG/dt=0.1A/µS - Critical Rate-of-Rise of Off-State Voltage Critical Rate-of-Rise of Off-State Current Gate Controlled Delay Time Thermal Resistance, Junction to Case C/W