MPSA06

DC COMPONENTS CO., LTD. R MPSA06 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 80 80 4 500 625 +150 -55 to +150 Unit V V V mA mW o o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO (1) Min 80 80 4 50 50 100 2% Typ - Max 0.1 0.1 0.25 1.2 - Unit V V V µA µA V V MHz Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=80V, IE=0 VCE=60V, IB=0 IC=100mA, IB=10mA IC=100mA, VCE=1V IC=10mA, VCE=1V IC=100mA, VCE=1V IC=10mA, VCE=2V, f=100MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width (1) VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle