MPSA42M

DC COMPONENTS CO., LTD. R MPSA42M DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as a video output to drive color CRT, or as a dialer circuit in electronic telephone. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 300 300 6 800 625 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT 380µs, Duty Cycle Min 300 300 6 80 80 40 50 2% Typ - Max 0.1 0.2 0.75 0.9 1 - Unit V V V µA V V V V MHz Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VEB=3V, IC=0 IC=20mA, IB=2mA IC=100mA, IB=10mA IC=20mA, IB=2mA IC=100mA, IB=10mA IC=10mA, VCE=10V IC=100mA, VCE=10V IC=200mA, VCE=10V IC=10mA, VCE=20V, f=100MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width