MPSA55

DC COMPONENTS CO., LTD. R MPSA55 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -60 -4 -500 625 +150 -55 to +150 Unit V V V mA mW o o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle Min -60 -60 -4 50 50 50 2% Typ - Max -0.1 -0.1 -0.25 -1.2 - Unit V V V µA µA V V MHz Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-60V, IE=0 VCE=-60V, IB=0 IC=-100mA, IB=-10mA IC=-100mA, VCE=-1V IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V IC=-100mA, VCE=-1V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width (1)