MPSA56

DC COMPONENTS CO., LTD. R MPSA56 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) o 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IC PD TJ TSTG C) Rating -80 -80 -4 -500 -1000 625 +150 -55 to +150 Unit V V V mA mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) Symbol .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle Min -80 -80 -4 50 50 50 2% Typ - Max -0.1 -0.1 -0.25 -1.2 - Unit V V V µA µA V V MHz Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-80V, IE=0 VCE=-60V, IB=0 IC=-100mA, IB=-10mA IC=-100mA, VCE=-1V IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V IC=-100mA, VCE=-1V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width