DC COMPONENTS CO., LTD.
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MPSA93
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use as a video output to drive color CRT, or as a dialer circuit in electronic telephone.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -200 -200 -5 -500 625 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min -200 -200 -5 25 40 40 50 2%
Typ 100 -
Max -0.25 -0.1 -0.4 -0.9 8
Unit V V V µA µA V V MHz pF
Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-160V, IE=0 VEB=-3V, IC=0 IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-30mA, VCE=-10V IC=-80mA, VCE=-10V IC=-10mA, VCE=-20V, f=100MHz VCB=-20V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1)
VCE(sat) VBE(sat) hFE1 hFE2 hFE3 hFE4 fT Cob
DC Current Gain(1)
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
380µs, Duty Cycle
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