MPSA94

DC COMPONENTS CO., LTD. R MPSA94 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -400 -400 -6 -500 625 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1 (1) Min -400 -400 -6 40 50 45 40 2% Typ - Max -100 -500 -100 -0.35 -0.5 -0.75 -0.75 300 - Unit V V V nA nA nA V V V V - Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-400V VCE=-400V VEB=-4V IC=-1mA, IB=-0.1mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-50mA, VCE=-10V IC=-100mA, VCE=-10V VCE(sat)2 VCE(sat)3 VBE(sat) hFE1 hFE2 hFE3 hFE4 DC Current Gain(1) (1)Pulse Test: Pulse Width 380µs, Duty Cycle