MPSH10

DC COMPONENTS CO., LTD. R MPSH10 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o TO-92 Pinning 1 = Base 2 = Emitter 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 20 15 3 50 625 +150 -55 to +150 Unit V V V mA mW o o 321 .148(3.76) .132(3.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(on) hFE fT Cob 380µs, Duty Cycle Min 20 15 3 60 650 2% Typ - Max 0.1 0.1 0.5 0.95 0.7 Unit V V V µA µA V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=20V VEB=2V IC=4mA, IB=0.4mA IC=4mA, VCE=10V IC=4mA, VCE=10V IC=4mA, VCB=10V, f=100MHz VCB=10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width