SC5094

DC COMPONENTS CO., LTD. R SC5094 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low noise amplifier at VHF, UHF and CATV band. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 18 10 2.5 20 150 +125 -50 to +125 Unit V V V mA mW o o .026(0.65) .010(0.25) .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .0043(0.11) .0035(0.09) .004 Max (0.10) C .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain(1) Transition Frequency Minimum Noise Figure Associated Gain Insertion Gain S21 in 50Ω system (1)Pulse Test: Pulse Width 2 (Ratings at 25 C ambient temperature unless otherwise specified) Symbol ICBO IEBO hFE fT NFmin GA S21 2 Min 50 2% Typ 80 7.6 9 1.4 1.6 12 13.5 12.8 13.5 Max 1 1 160 - Unit µA µA GHz GHz dB dB dB dB dB dB Test Conditions VCB=3V VEB=1V IC=1mA, VCE=2V IC=10mA, VCE=1V IC=12mA, VCE=3V IC=4.2mA, VCE=2V, f=0.9GHz IC=4.5mA, VCE=5V, f=0.9GHz IC=4.2mA, VCE=2V, f=0.9GHz IC=4.5mA, VCE=5V, f=0.9GHz IC=4.2mA, VCE=2V, f=0.9GHz IC=4.5mA, VCE=5V, f=0.9GHz 380µs, Duty Cycle