SS510F

SS52F THRU SS520F HD AF66 SMAF Plastic-Encapsulate Diodes Features ●Io 5A SMAF ●VRRM 20V-200V ●High surge current capability ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● SS52F-SS520F : SS52-SS520 Item Symbol Unit SS5 Test Conditions 2F 3F 4F 5F 6F 8F 10F 15F 20F Repetitive Peak Reverse Voltage VRRM V 20 30 40 50 60 80 100 150 200 Maximum RMS Voltage VRMS V 14 21 28 35 42 56 70 105 140 Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance load, TL(Fig.1) Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ TJ ℃ TSTG ℃ Junction Temperature Storage Temperature 5.0 150 -65~+125 -65~+150 -65 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Peak Forward Voltage Peak Reverse Current Thermal Resistance(Typical) Symbol Unit VF IRRM1 IRRM2 RθJ-A RθJ-L Test Condition IF =5.0A V mA ℃/ W VRM=VRRM SS5 2F 3F 4F 0.55 5F 6F 0.7 Ta =25℃ 0.5 Ta =100℃ 10 8F 10F 15F 20F 0.85 0.95 0.2 5 1) Between junction and ambient 55 Between junction and terminal 171) Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 6.0 SS52F-SS54F 150 SS55F-SS520F 5.0 8.3ms Single Half Sine Wave JEDEC Method 120 4.0 90 3.0 60 2.0 30 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5mm× 5mm)Copper Pad Areas 1.0 0 0 75 50 25 100 125 0 150 1 2 10 20 FIG.4：TYPICAL REVERSE CHARACTERISTICS FIG.3: TYPICAL FORWARD CHARACTERISTICS 100 IR(mA) IF(A) 100 Number of Cycles TL(℃) TJ=25 ℃ Pulse width=300us 1% Duty Cycle 100 SS52 -SS56 SS58 -SS520 10 10 Tj=100℃ 5.0 1.0 1.0 0.1 SS52F-SS54F SS55F-SS56F SS58F-SS510F SS515F-SS520F 0.1 0.01 Tj=25℃ 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF(V) 0 20 40 High Diode Semiconductor 60 80 100 Voltage(%) 2 SMAF .193(4.90) .173(4.40) .047(1.20) .035(0.90) .146(3.70) .130(3.30) .063(1.60) .106(2.70) .051(1.30) .094(2.40) .007(0.18) .005(0.12) .051(1.30) .031(0.80) Dimensions in inches and (millimeters) SMAF 1.9 4.65 0.55 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Dev ices- SMAF High Diode Semiconductor 4