1N5402

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPDP-301-1B 3 AMP GENERAL PURPOSE SILICON DIODES FEATURES Low cost Low leakage Low forward voltage drop High current capacity Easily cleaned with freon, alcohol, chlorothene and similar solvents BL ÎÕó‘Ã6¯³Ñ ÎÃÏ Ê ÀÔÁ ÀÓ Ò Ð Ë ÎËÌ³É žÇ|³HïÀ Í Ê ÈÆ ÅÀÄ Á MECHANICAL SPECIFICATION SERIES 1N5400 - IN5408 DO - 27 LL BD (Dia) RoHS COMPLIANT MECHANICAL DATA Color Band Denotes Cathode LL Case: JEDEC DO-27 molded epoxy (U/L Flammability Rating 94V-0) Terminals: Plated axial leads Soldering: Per MIL-STD 202 Method 208 guaranteed LD (Dia) Sym Polarity: Color band denotes cathode Minimum In mm BL Mounting Position: Any Weight: 0.02 Ounces (0.7 Grams) Maximum In mm 9.28 0.365 0.205 5.2 1.3 BD LL LD 1.00 0.048 25.4 1.2 0.052 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 2HG A 6F 3§©! # ©©! £ ¡ #§1 ©§©& 6! ¤9 £ ¤§§¡ ¡ 3©E  £¥ #$) ! 7¨1¡ % ) " )#& 2©§& 6! ¤9 £ ©©¥ ¤3#3§ ¤9 §¨ ¤¨ ! # 7 D©A @ ! 9 8©0 ©§' 7©§¨ §©"6! ©¥ 54 1¡ % )$1 &! £ CB 7 ¡ ( %¡ ! ¡' %¦ ¤ 21 ¤)!" 3§ ¤! 0 §§§©¨! ¨ ¤( ©§' §§¨ ! ©! #$ £ ¡ ©§" §! ©£ !  ©  £ ©§¥ ¤ £ ¢  #! £& ¨ %¥$ #!  £ ¥ ¤ ¡   ¡ ¨¦ ¡ PARAMETER (TEST CONDITIONS) Series Number SYMBOL RATINGS ¢ þý ûúùø÷õ ôóòñðî íìëê çæåäãâ ÝáàßÞ ÜÜÛÚÙ £ ¡ÿiXüïX8iXö88iiïìiiièéXii|iiÝ X8XiØ UNITS H13 Œ ‹ Š ˆ ‰ ˆ †‡ … „ ƒ ‚ 8¢u} |Xy x z€~ { z Operating and Storage Temperature Range ¨ ™ •X¢¬i¢³i˜3“ ™ i²¢¬’D¨ ¢’D±3’ ‘”D’ £ 5°i¢¯®H«¬D“‘D’ i©¢3D§‘¢¦  ²± µ´² ’ • ± ª ª • °“ ­ §Ž™ ” ª ¨“’   œ¥‘ž¢ Ÿ¢¤ 35— žD3  ¢žœš 5¢¢’ –3D¢‘3Ž  6i¹8H¶ ¥ Ÿ £ ¢¡ Ÿ › ™˜— • ”“’  » º ¸ · TT hge d i8fDc … Typical Junction Capacitance (Note 2) C Xv w ba 3` Typical Thermal Resistance, Junction to Ambient (Note 1) R u ¢t 6Q R ¿ ¾ Maximum Average DC Reverse Current At Rated DC Blocking Voltage @ T = 25 C @ T = 100 C I °C/W pF °C y Xr s q YW UT XV 6S Maximum Full Cycle Reverse Current @ T = 75 C (Note 1) ½ ¼ I Xo p  5€ Maximum Forward Voltage at 3 Amps DC × Ö V XXl mm n „ƒ ¢‚ I p I k Average Forward Rectified Current @ T = 75 C Lead length = 0.375 in. (9.5 mm) Peak Forward Surge Current ( 8.3 mSec single half sine wave superimposed on rated load) vt 6ut Maximum Peak Recurrent Reverse Voltage P I V )) ££)( hh XXg ## ¡£" X8i jj X8– ——  £ £¨ © sr 6q Maximum RMS Voltage V '' ¡£& fe XXd ! ¡¡ XX“ •” 8¢ ’‘  £ £¦ § uw x Maximum DC Blocking Voltage V %% ££%$ ™™ XX˜  ¡£ X8ˆ ‰‰ X8† ‡‡  £ £¤ ¥ VOLTS AMPS VOLTS A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPDP-301-2B 3 AMP GENERAL PURPOSE SILICON DIODES RATING & CHARACTERISTIC CURVES FOR SERIES 1N5400 - 1N5408 6 Average Forward Current, Io (Amperes) 5 4 2 1 0 0 50 100 150 180 Ambient Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE 100 10 Number of Cycles at 60Hz FIGURE 2. FORWARD SURGE CURRENT Instantaneous Forward Current (Amperes) 10 Instantaneous Reverse Current, I (Microamperes) 1.0 .1 1.0 0.1 TJ = 25 oC 0.1 NOTE 2 40 Percent of Rated Peak Reverse Voltage 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTICS TJ = 25 oC Capacitance, pF NOTES (1) Single Phase, Half Wave, 60 Hz; Lead Length = 0.375" (9.5mm) (2) T = 25 C, Pulse Width = 300 Sec, 1.0% Duty Cycle ~ } | Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE A @ 9 7 8 7 6 5 4 32 1 H14 qig fec phRDdbD` aa xv RwRt u s Rr .01 0 …… RD„ ‚ D x zxyxv st rqp  r{ rz bfwhus ˜b’o NOTE 1 k m l ige™ •– ”“‘  ”n ”m bkk j hhfd˜—• b’  ™— • š žœ ›R˜–” ƒ RDy €€ 3 Peak Forward Surge Current (Amperes) PP RQI 0 TDS E RRQˆ ‰‰‰ D† ‡ ‚f‹“’‡R†… ƒh†Ž††Š ‰ˆ‡—†… ƒ£„¡‚ ƒfh€ ‘  € „Œ‹ ƒ  € ‚ H F G W U V RYDX Y C DB