ADB1004

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-1000-1C ABDB-1000-1C 10 AMP SILICON BRIDGE RECTIFIERS FEATURES MECHANICAL SPECIFICATION ACTUAL SIZE DT DB1004 VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE SURGE OVERLOAD RATING TO 400 AMPS PEAK SERIES DB1000-DB1010 and ADB1004-ADB1008 BH UL RECOGNIZED - FILE #E124962 RoHS COMPLIANT MECHANICAL DATA Case: Molded Epoxy (UL Flammability Rating 94V-0) Terminals: Round silver plated copper pins Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on side of case; positive lead at beveled corner Mounting Position: Any. Through hole provided for #6 screw Weight: 0.18 Ounces (5.4 Grams) SYM BL BH D1 LL MILLIMETERS MIN 18.5 6.4 12.2 MAX 19.6 7.6 13.2 22.2 1.2 n/a 1.3 LD MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 0 ¨ B 6 §A @¢ ¤   § ¢ ¡  ) 2 ¦ ) ¡ # ! £4 £¢ ' ¡  ¡ '  # 9 ' " 0 ) ¡ # ! £4 ¢ ' ) £¤  § £4 ¢ £¦ ¦  2 8 7 6 5 2  4 ¡3% "( ¡ $ 2  ¦ ¡ $  " ¥ £¤ 1 " #  0 ) £ £( '   § ¦ & %  $ ¢ §¦ ¦ " ¤ !  ¢ ¡     ¢ ¢ ¤ £   §© ¨ ¢ §¦ ¥ £¤ ¢ ¡   ¦£ #  ¡ ¡ Series Number c‚ ƒ Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Power Dissipation in V hif g V V Thermal Energy (Rating for Fusing) Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). TJ = 150 C @ T = 50 C (Notes 1, 3) @ T = 50 C (Note 2) Junction Operating and Storage Temperature Range Minimum Avalanche Voltage Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode) at 5 Amps DC It AMPS SEC V I Typical Thermal Resistance E33 o npq o n lm h Junction to Ambient (Note 2) Junction to Case (Note 1) R R «•'Ç ¨vº ¨'¼¶µ¥'1¸ ¿''º ¥ ¨º '£G•1'¸ £ §µ À ''•¡¥v¸ ¹ •Ç v¸ ‡¼ §¶ v §µ •'º Ç'À ¥¡'»1'º¸ ½1¥ §µ v §® '¸ ¨vµº '•©¥•©•'º 'ºÌv¥'© ¨ ½ ••v£v• §» ¥¸'v'© '´• °Ê ®µ ¸®º ·Æ¸¾¼ ¹ ¸¾ ¿¶Ì ¼ ¦¶»Ãº ¹½ §µ¸·® º ® § ¯ ¹ ¨º ¿·· ¹ ¶Î Í «¼ ¦¶ à ¹ ¨º ¨ ¹ ¹º µ ¸ µ¼ ¿ º ¸ ¨ § §©É¸ ®¸¾ ¹½ ®¸ Ë « '¸ v''º ¹ •v• ³•ž³ •1‡¹ ¶ ¡º À ••‡' §¼ LJž•'¡• §» ¹•žG¦ v'È'¶•‡³ ¶µ1'‡³ ''© ¥¼ ¶ ¿§µ §•‡'¼ •'Ç¥¦v¸ ¹'¡Å'¥© ¨ ¡C¼ ••v'©ž¶¥• §» ½ ¿¨ I´'Á ° ¹ À®¼ ¨¨º¸© Ç §Éº ³ À ¸µ ¹Ç® ¾ ¨¼ ¶ ³ »¼º ¸¾ ½ ¼¸¸ ¨¸½ »¼Ç · ¿º ¹¸ ¨ ® ¾ §® Æ µ® Ä § ¦ à §®¨º¸ ¼ ¸¾ ¹ ¶Â ž‡'‹ '˜ ¥v '‘ '‡© •''¸ ž¸ £•¾ §» ž•£•»v'''·¶•´ «'›³ž'’± °v'“­¬ '‡© ¨ ¡¦ ‚ '•†I£¢ ¡ž‰ ‡„ †‡…¥• ‚ e~'— | ~ … … Œ | ‹¤ Œ À¶ ¨¾¼ ¿ »º ¿ ¸ ¹½ »¼º ® º·¹¸ · µ ¯® ³² «¯® «ª § €œ  † ‚ Š‰ˆ „ƒ € „ vœ • …‰ ž•ˆ '•‡' Œ£›'•š '1‡™…•˜ '—1} ¡'• •” “’’} '£ •¥1} '£‰ ‡„ †‡…¥• ‚ e~v} |vyCIv Š Ÿ ˆ  … œ~ …• ‘ Ž … Œ‘} Ž Œ | –  Š } Œ‘ Ž Œ Ž Œ‹ † ‚ Š‰ˆ „ƒ €  { z x w 54 '13 20 1) ‡  …† Minimum Insulation Breakdown Voltage (Circuit to Case) V VOLTS C/W e ƒ „ ‚  x w Maximum Reverse Current at Rated V @ T = 25 C @T = 100 C k j•i gggf d ™ ˜ — ‰ˆ‰– ’ ‰ ˆ  Ie”•“ E‘  Iˆ 7 6 ut s rq vGep i V QS IGES CR W VUT S h ¡f eb a g dc V `Y X @9 8 Q!XUVT SQ P YW RQ QB IGEB CA P HFD B HF GE T ,T I D € y $ # Average Forward Rectified Current I ( & '%      I AMPS °C VOLTS A  © ¨ v P º ¸ ¹ ¦ Continuous Power Dissipation in V @ T =80 C (Heat Sink Temp) Region u ct Region for 100 S Square Wave db eca ` P · µ ¶ ´´ ³ €cv Sv yx w V Þ eÜXÛ Ú Ý ÖGÕ Ö ÙG× Ø G±¿GÍËȤ¡G¿G» ÔÓÒ ÑÐÏ ÎÌÊ ÉÇ ÆÅ ÄàÁÀ¾ ½¼ ut cct V ˜˜ §—c§—G§””G§‘!G§ˆ‰eG§…†G§ƒ!G§{G§w –•• “’’ ŽŽŒ ‹ŠŠ …‡‡ „„„‚ €€~ }||z yxx ˆrˆoˆlˆeˆeˆeˆ˜ˆ†“”ˆ†ˆ†„ sq pn mk ji hg fd ™— –• ’‘‰ ‡… šG§™ šš ²G±®G¡¡G§§¤¡ž› ²° ¯¯­ ¬¬« ªª© ¨¨¦ ¥£ ¢¢  ŸŸ œœ ûúùù éecâó ¤ ¢   øÿ €ü ò þ ü ý å ¥£¡††eXü ò ÷ö ô ó ˆõ ó ò ñ ï îí êì êë ˆð円eXê èçææ àäãá à éecâåX€âˆß PARAMETER (TEST CONDITIONS) SYMBOL s Cr u Ct _ + LL LD D1 INCHES + D1 _ BL MIN 0.73 0.25 0.48 MAX 0.77 0.3 0.52 0.875 0.048 n/a 0.052 BL RATINGS UNITS VOLTS sp rq WATTS § C " ! DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-1000-2C ABDB-1000-2C 10 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES DB1000 - DB1010 and SERIES ADB1004 - ADB1008 12 400 Resistive and Inductive Loads Average Forward Current, Io (Amperes) 10 350 Peak Forward Surge Current (Amperes) Case 8 300 Ambient 6 250 200 4 150 2 100 NOTE 2 0 0 50 100 150 50 1 10 100 Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE Instantaneous Reverse Current, I (Microamperes) Instantaneous Forward Current Amperes 1.0 NOTE 3 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE ¤©¨ © Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS Capacitance, pF (1) Case Temperature, T With Bridge Mounted on 5.1" x 4.3" x 0.11" Thick (12.9cm x 10.8cm x 0.3cm) Aluminum Plate Ambient Temperature, T With Bridge Mounted on PC Board With 0.5" Sq. (12mm Sq.) Copper Pads And Bridge Lead Length of 0.375" (9.5mm) (2) T = 150 C (3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle (4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p   ¢¤¢£¡    E34 ÑÓÔ ÒvÒ Ñ ÏÐ   Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE   NOTE 4 NOTES Ù'ØÖ × êéç 1èv1åâ ææä ã á và ßÝ 'ÞÛ Ü Ú íì •ë 'ë ð 'î ï ÷ vö õ ’ô T = 100 C ó 1ñ ò Õ Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT ¦ §¥   ÿ1þ ÿ ý 1ü ûû 1ú ù1ø T = 25 C