0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
ADB608

ADB608

  • 厂商:

    DEC

  • 封装:

  • 描述:

    ADB608 - 6 AMP SILICON BRIDGE RECTIFIERS - DIOTEC Electronics Corporation

  • 数据手册
  • 价格&库存
ADB608 数据手册
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-600-1D ABDB-600-1D 6 AMP SILICON BRIDGE RECTIFIERS FEATURES MECHANICAL SPECIFICATION ACTUAL SIZE DT DB602 VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE SERIES DB600 - DB610 and ADB604 - ADB608 BH §¥ ¦ SURGE OVERLOAD RATING TO 250 AMPS PEAK RoHS COMPLIANT MECHANICAL DATA Case: Molded Epoxy (UL Flammability Rating 94V-0) Terminals: Round silver plated copper pins Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on side of case; positive lead at beveled corner Mounting Position: Any. Through hole provided for #6 screw Weight: 0.13 Ounces (3.6 Grams) SYM BL BH D1 LL LD MILLIMETERS MIN 14.7 5.8 10.3 19.0 1.0 MAX 15.7 6.9 11.3 n/a 1.1 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 5 G   ¥ $%2 £ $! 9¨4¡ ' #©A F 8£ ! $ ©&! ©¡ §§4 ©§©( ! ¤D £ ©©¡ ¡ 8§§©( &© ¤D £ ©8§¥ ¢8© ¤D ©¨ ¤¨ ! $ 9 C¢©©@ §©¨ ©§! '8©¥ 76 5§ ¤! 3 ©§! "¨1! ¨ &0 §©) §&¨ ¨ ! '§&! §% ©¡ §©#§! ©©§! § ©¡  ©¡©§¥ ¤ £ ¢  ¤2 " 2$(E 54¡ ' ! 2%4 ¤$( ! £ BA 9! ¡)" ¦ ¤ 4 ¤2 ¤ $! £( ¥% $ £ $!"  ££¥ ¤   £ ¨¦ ¡ Series Number t s Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Power Dissipation in V X V W V V Thermal Energy (Rating for Fusing) t < 8.3mSec Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). Tc = 60 C Average Forward Rectified Current, T = 60 C (Note 2)  P I H It þý &”ü AMPS SEC E25 e d ™ —Q˜ — – • z€~Qt ~ t~Qr ‚8{ €~ { sz„ z{zy~|u 6z~ t sQ~zux z~{ u8 w‚ ‡ ~z{ u€ { v uQ~{ 6u wr t  w‚ uzuzvuuzz‡ ¡z8zzx z { zuœt £ w‚ ~ w€ z{ t z u z‚~~zz z ~~} ~t zu uz~¡~~yu wx u6{ € ~Qz~ m Š…‚| ¢ v {y r | †r  vu w‚ „€  w… v | s„„ …r¡   Š| †r  v t v ‚ v } {}‚| s  { t w w}ˆ{ €{ vu {}Ÿp t€ sQru¡ zzz8z~ t sQ~ ž ŠŒ‡r {y r  x| ›š ™ ot x v… { p ² µ { © € z{ ² ~± { $z w{ suzv„ „u 8zz•£” œ8r 6x Š Q| ~… r z{ ƒ u{ zy € ~¡™u~ mŒ ´v  v ¤x p ƒ ƒ Š Ž Š ¼ ¥°¯ Á ¿ Á ¬° «À ¿¯ ©¿ «¬½ ª µ© ¹ $$z z˜ m~ — ’ ~ z8¦ zzz¬ $z¾ ¬ 6~u ¤¿ z‰zz¾zz¾ ½Qz~z½Q¼ z» ²Q~º$¹ ¸ · ¶ uz%z³ z8¦ ¥ 8£ x u~–Q$Q8z{ t uQ$8zz wx @qup ’ m rq | v { t  z“~…u| w‰z… u $~‚ ’ ~6ˆ Šuz€‘~~ ~ ¤ o m~­ ‚ z£ } Ž ª o o ~6ˆ ŠQ~Ž  z8Q8z{ t uQ$8zz wx @qup ‹ m s„ ƒ ƒ s p ƒ Š   ƒ ‚ Š° ©  w t « Š ¨  § ¤  € Š Œ | r x | … r ƒ { y v Š z{ ‡ €~z v zt  ~}z…‰ƒ z~6ƒQvur { z ‡ uz8~ w| ~zQ$$zzzz wx u6z{ ¡† t ~$~u…Q~„iz~‚ z6ƒ z~} |Qr sw‚ z€ ~¯ z~® £~¬ ~z©¡z¦ ¥ £ z| zz~ ~6Q8zz wx uQt uqup o nl6@¡if v | t { ƒ wˆ ‡ ‚ v…€ y t|…r ƒ x| {y vu | { {u x| r ƒr s v{ t w  w€t {} |r {y vu sr m kj h g vt %us Typical Thermal Resistance, Junction to Case (Note 2) R ” ¡ …† ‡ Minimum Insulation Breakdown Voltage (Circuit to Case) V ££¡‘ ““’ „ 6ƒ ‚  x 6w Maximum Reverse Current at Rated V @ T = 25 C @T = 125 C I £‰ ˆ T Typical Junction Capacitance (Note 4) € y C 8q r S @R Maximum Forward Voltage (Per Diode) at 6 Amps DC V £W Ui@¡e 88b@a `£W U p V hgf dc Y X V PI H GF Q§686E D V See Note 5 2 ¡0 1 Maximum Avalanche Voltage C B@864 3 A 975 Minimum Avalanche Voltage V See Note 5 ) ¡' ( £%$!" ¡  &#    Junction Operating and Storage Temperature Range T ,T Q I ¤ £¡ÿ ¢  I AMPS °C VOLTS pF mA VOLTS C/W û aù7ø ú n P ÷ ² 1° ± ö Continuous Power Dissipation in V @ T =80 C (Heat Sink Temp) Region m l Region for 100 mS Square Wave UT &S R P ¯ 1­ ® a« ¬¬ qf hf rpi g V ÓÒ &Ñ Ð Ì aÌ1Ë ÏÎ aaÍ 11ta1†¢Âa¿aja1wa{aa³ ÊÉÈ ÇÆÅ ÄÃÁ À¾ ½¼ »º¹ ¸·¶ µ´ ed d V ––– aa7• “”’&‘aa1aŠˆra†1a‚a}~1a{a1wa1tr1o  ŽŒ ‰‹‰ ‡… „ƒ € ||z yxv sus qp yijygydy’y•y’y‰yw„…wywu k hf e™ ˜— –” “‘ ˆ ‡† ƒ‚€ xv ªaa1aaw1a†a¢7¡aža1wa1~a1— ª© ¨¨§ ¦¦¥ ¤¤£ ¢  Ÿ œœ› šš™ ˜˜ õ ô ó ëqï å ñ ï ð  yyw1w#ï å ê òé ç å î &×æ íìì æ yè æ äãâá Þà Þß yyw1w#Þ Ý &&Ûq#q×yÔ ÜÚÚ ÕÙØÖ Õ PARAMETER (TEST CONDITIONS) SYMBOL §¨ © _ + UL RECOGNIZED - FILE #E124962 LL LD D1 INCHES MIN 0.58 0.23 0.405 0.75 0.039 MAX 0.62 0.27 0.445 n/a 0.042 + D1 _ BL BL RATINGS UNITS b` caY VOLTS WATTS DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-600-2D ABDB-600-2D 6 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES DB600 - DB610 and SERIES ADB604 - ADB608 65 4 9.0 Average Forward Current, Io (Amperes) 6.0 4.5 0 0 50 100 150 Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE Î œÎuÍ Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 100 Instantaneous Forward Current Amperes Instantaneous Reverse Current, I (Microamperes) 100 10 1.0 NOTE 3 0.1 1.0 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE ©  Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE NOTES NOTE 4 (1) Case Temperature, T With Bridge Mounted on 4"Sq. x 0.11" Thick (10.5cm Sq. x 0.3cm) Aluminum Plate (2) T = 150 C (3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle (4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p 50 - 400V 600 - 1000V !! © ©     £ ¢ ¡   ¡   Capacitance, pF Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE E26 É È Ç uÆ Å Ä Ã Å Ø%zÖQuҜuÏ ×Õ ÔÓÑ ÐÐ ãá œâœß à Ý%ÜœÙ Û Ú ÿ 6þ Þ 0.1 && ©% $ ¦# ìéç å ê íë `œèæä `œunö÷õ ûýúùø ü òôññð ï ó `Qunæî " Q P 1.5 GG ©F 3.0 98 ©7 NOTE 1 BA ©@ Case, Tc 32 2 11 0 ED ©C 7.5 Peak Forward Surge Current (Amperes) 60Hz Resistive or Inductive Loads )( ' NOTE 2 I H S R Ê ÌuË ¨©§ ¨ ¥ ¦¤
ADB608 价格&库存

很抱歉,暂时无法提供与“ADB608”相匹配的价格&库存,您可以联系我们找货

免费人工找货