DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-800-1C ABDB-800-1C
8 AMP SILICON BRIDGE RECTIFIERS
FEATURES MECHANICAL SPECIFICATION
ACTUAL SIZE DT DB804
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE SURGE OVERLOAD RATING TO 400 AMPS PEAK
SERIES DB800-DB810 and ADB804-ADB808
BH
UL RECOGNIZED - FILE #E124962 RoHS COMPLIANT
MECHANICAL DATA
Case: Molded Epoxy (UL Flammability Rating 94V-0) Terminals: Round silver plated copper pins Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on side of case; positive lead at beveled corner Mounting Position: Any. Through hole provided for #6 screw Weight: 0.18 Ounces (5.4 Grams)
SYM BL BH D1 LL MILLIMETERS MIN
18.5
6.4 12.2
MAX 19.6 7.6 13.2
22.2 1.2
n/a 1.3
LD
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
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Series Number
d
Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Power Dissipation in V
ipg h
V V
Thermal Energy (Rating for Fusing) Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). T = 150 C @ T = 50 C (Note 1) Average Forward Rectified Current @T = 50 C (Note 2)
E
It
AMPS SEC
Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode) at 4 Amps DC
V @ T = 25 C @T = 125 C
V I
Typical Thermal Resistance
E31
n pqr uo n lm
h
Junction to Ambient (Note 2) Junction to Case (Note 1)
R R
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32 %)1 0( )'
Minimum Insulation Breakdown Voltage (Circuit to Case)
V
VOLTS C/W
e
w v
Maximum Reverse Current at Rated V
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5 ¨4 ts r qp uEci h g fc` Y edba
Minimum Avalanche Voltage
V
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IQ GECAP U TSR QQ I@ GECA9 H FDB @@
IG HF
Junction Operating and Storage Temperature Range
T ,T
P
I
& $ %#
I
AMPS
°C
VOLTS
A
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w
P
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Continuous Power Dissipation in V @ T =80 C (Heat Sink Temp)
Region
v du
Region for 100 S Square Wave
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P
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V
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PARAMETER (TEST CONDITIONS)
SYMBOL
z Ay | A{
_ +
LL
LD D1
INCHES
+
D1 _ BL
MIN
0.73 0.25 0.48
MAX 0.77 0.3 0.52
0.875 0.048
n/a 0.052
BL
RATINGS
UNITS
VOLTS
tq sr
WATTS
¥
y
x
D
"
C
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DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-800-2C ABDB-800-2C
8 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB800 - DB810 and SERIES ADB804 - ADB808
12 400
60Hz Resistive or Inductive Loads
Average Forward Current, Io (Amperes)
350 10
Peak Forward Surge Current (Amperes)
NOTE 1
8
300
Case
6
250
200
4
Ambient
150
2 100 0
NOTE 2
0
50
100
150
50
1
10
100
Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE
Instantaneous Forward Current Amperes
Instantaneous Reverse Current, I (Microamperes)
1.0
NOTE 3
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
NOTE 4
NOTES (1) Case Temperature, T With Bridge Mounted on 4.9" x 4.3" x 0.11" Thick (12.4cm x 10.8cm x 0.3cm) Aluminum Plate Ambient Temperature, T With Bridge Mounted on PC Board With 0.5" Sq. (12mm Sq.) Copper Pads And Bridge Lead Length of 0.375" (9.5mm) (2) T = 150 C (3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle (4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
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Capacitance, pF
E32
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Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
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0.01
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Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
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T = 100 C
T = 25 C
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