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ADB804

ADB804

  • 厂商:

    DEC

  • 封装:

  • 描述:

    ADB804 - 8 AMP SILICON BRIDGE RECTIFIERS - DIOTEC Electronics Corporation

  • 数据手册
  • 价格&库存
ADB804 数据手册
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-800-1C ABDB-800-1C 8 AMP SILICON BRIDGE RECTIFIERS FEATURES MECHANICAL SPECIFICATION ACTUAL SIZE DT DB804 VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE SURGE OVERLOAD RATING TO 400 AMPS PEAK SERIES DB800-DB810 and ADB804-ADB808 BH UL RECOGNIZED - FILE #E124962 RoHS COMPLIANT MECHANICAL DATA Case: Molded Epoxy (UL Flammability Rating 94V-0) Terminals: Round silver plated copper pins Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on side of case; positive lead at beveled corner Mounting Position: Any. Through hole provided for #6 screw Weight: 0.18 Ounces (5.4 Grams) SYM BL BH D1 LL MILLIMETERS MIN 18.5 6.4 12.2 MAX 19.6 7.6 13.2 22.2 1.2 n/a 1.3 LD MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 0 ¨ B 6 §A @¢ ¤   § ¢ ¡  ) 2 ¦ ) ¡ # ! £4 £¢ ' ¡  ¡ '  # 9 ' " 0 ) ¡ # ! £4 ¢ ' ) £¤  § £4 ¢ £¦ ¦  2 8 7 6 5 2  4 ¡3% "( ¡ $ 2  ¦ ¡ $  " ¥ £¤ 1 " #  0 ) £ £( '   § ¦ & %  $ ¢ §¦ ¦ " ¤ !  ¢ ¡     ¢ ¢ ¤ £   §© ¨ ¢ §¦ ¥ £¤ ¢ ¡   ¦£ #  ¡ ¡ Series Number dƒ „ Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Power Dissipation in V ipg h V V Thermal Energy (Rating for Fusing) Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). T = 150 C @ T = 50 C (Note 1) Average Forward Rectified Current @T = 50 C (Note 2) E It AMPS SEC Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode) at 4 Amps DC V @ T = 25 C @T = 125 C V I Typical Thermal Resistance E31 n pqr uo n lm h Junction to Ambient (Note 2) Junction to Case (Note 1) R R ¬•¯%Æ©u» ©%½¨·¶£¹%¯)»¹ À¨¸Å¹¨¿%½%» º£¨ ©» ¨%¡E•¨)%¹ ¨¡ ¨¶ Á %%•f£u¹ º •u¹ ˆ ¨· u ¨¶ •¨%¨Æ¨%¨Á £¨f%¨¼)%»¹ ¨¾)£ ¨¶ u ¨¯ %¹ ©u¶» %•ª£•ª•%» %»Ìu£%ª ¨© ¨¾ ••u¡u•¨ ¨¼ ¨£¹%u%%µ• ±Ê ¶ ¹¿ À·Ì ½ §·¼Ä» º¾ ¨¶¹¸¯ » ¯ ¨Æ° º ½ ©» À¸¸»º ·Î Í ¬½ §· Ä º ©» © º º» ¶ ¹ ¶½ À » ¹ © ¨ ¨ªÈ¹ ¯¹¿ º¾ ¯¹ªË º Á¯½ ©©»¹ª ´Æ ¨È» ´º ÁŹ¶ Ư ¿ ©½Æ· ´ ¼½» ¹¿ º¾ ½ ¹ ©¹ ¼½ ·¸ ´ À» º¹ © ½ ¨¯ ¿ ¨¯ Ä ¨¯©»¹ ½ ¹¿ º¾ À· à ¹ %» º ¨uu•É¨ˆ´ •u¡· )» Á º¨%ˆ% ¨½ ¨¨ˆž•%f¨• ¨¼ •ž%¹uE§ u%¾Ç%¨Æ¨•ˆ·¶)%ˆ´ %•ª ¡¨· À¨¶ %ˆ%½ •%ÆÅu¨½ ••u%ªž¨·£•¨ ¨¼ ¨© G¨µ% ±Â žˆ%¥ %Ž ¦u‘ %’ %ˆª •%%¹ ž¹ ¡•¿¨ ¨¼ ¨ž•¡•¼u%%%¸¨¨·•µ ¬¨%›´ž%“² ±u¨%”®­ %ˆª © f§ ƒ %•‡G£¡žˆ… ¨¨‡ˆ†£¨• ‚ƒ c¨% }˜  † †  } ¥¤  Á· ©¿½ À ¼» À ¹ º¾ ¼½» ¯ »¸º¹ ¸ ¶ °¯ ´³ ¬°¯ ¬« ¨ œ € ¢ Š‡ ƒ ‹Š‰ …„ € … uœ • †¨¨Š ž•‰ %•ˆ%‘ ¡›%–š %)ˆ™†%Œ %˜)~ f%– •• ”““~ %¡‘ •£Ž •Œ£ˆ… ¨¨‡ˆ†£¨• ‚ƒ c¨u~ } ¨vAGs ‹ Ÿ ‰ ‚ † œ †– ’  † ’~  –  } — ‚ ‹ ~ ’  Œ   Š‡ ƒ ‹Š‰ …„  € x w u t 32 %)1 0( )' †  „… Minimum Insulation Breakdown Voltage (Circuit to Case) V VOLTS C/W e ‚ ƒ  € w v Maximum Reverse Current at Rated V k j•i ggg f ™ d ˜ —‡ ˆ‡ˆ– ‘  ˆ ‰ c•c”•“ ’‰ c‡ 5 ¨4 ts r qp uEci h g fc` Y edba Minimum Avalanche Voltage V X V W 8 6 7 R!YVWU TR Q `X SR IQ GECAP U TSR QQ I@ GECA9 H FDB @@ IG HF Junction Operating and Storage Temperature Range T ,T P I & $ %#     I AMPS °C VOLTS A © § ¨¦ w P ¹ · ¸ ¤ Continuous Power Dissipation in V @ T =80 C (Heat Sink Temp) Region v du Region for 100 S Square Wave ec fdb a P ¶ ´ µ ³³ H² dw Tw ‚€y x V Ý fÛYÚ Ù Ü ÕHÔ Õ ØHÖ × H°¾HÌÊǤ¡H¾Hº ÓÒÑ ÐÏÎ ÍËÉ ÈÆ ÅÄ ÃÂÁ À¿½ ¼» vu ddu V šH§™ šš ˜§f€”H™H|f†ƒH€H|x —– “•“ ’‘ ŽŒ ‹Š‰ ˆ‡… „„‚  ~}{ zy ‰s‰p‰m‰f‰f‰f‰™‰‡”•‰‡‘‰‡… tr qo nl kj ih ge d˜ —– “’ ˆ† ±H°”H¡¡H§§¤¡ž› ±¯ ®®­ ¬¬« ªª© ¨¨¦ ¥£ ¢¢  ŸŸ œœ úùøø èfdáò ¢   ÿ ÷þ û ñ ý û ü ä £¡ä‡‡fYû ñ öõ ó ò ‰ô ò ñ ð î íì éë éê ‰ï䇇fYé çæåå ßãâà ß èfdáäYá‰Þ PARAMETER (TEST CONDITIONS) SYMBOL z Ay | A{ _ + LL LD D1 INCHES + D1 _ BL MIN 0.73 0.25 0.48 MAX 0.77 0.3 0.52 0.875 0.048 n/a 0.052 BL RATINGS UNITS VOLTS tq sr WATTS ¥ y x D " C !  DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-800-2C ABDB-800-2C 8 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES DB800 - DB810 and SERIES ADB804 - ADB808 12 400 60Hz Resistive or Inductive Loads Average Forward Current, Io (Amperes) 350 10 Peak Forward Surge Current (Amperes) NOTE 1 8 300 Case 6 250 200 4 Ambient 150 2 100 0 NOTE 2 0 50 100 150 50 1 10 100 Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE Instantaneous Forward Current Amperes Instantaneous Reverse Current, I (Microamperes) 1.0 NOTE 3 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS NOTE 4 NOTES (1) Case Temperature, T With Bridge Mounted on 4.9" x 4.3" x 0.11" Thick (12.4cm x 10.8cm x 0.3cm) Aluminum Plate Ambient Temperature, T With Bridge Mounted on PC Board With 0.5" Sq. (12mm Sq.) Copper Pads And Bridge Lead Length of 0.375" (9.5mm) (2) T = 150 C (3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle (4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p     © ¨ © Capacitance, pF E32 Ü Þßà )Ý Ü ÚÛ   Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE èç “æ ø÷õ ôôò “ö)óð ñ ï î í ì ë ê é 0.01 ûú •ù ù þ %ü ý § ¡¦ ¤ ¥£ ¢ ¡ÿ   ÕÕ)Ô á Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT × “Ö Ó Ù%Ø Ù Ò)Ñ Ò Ð )Ï åå )ä ã)â T = 100 C T = 25 C
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