RP100

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. FSDP-103-1B 1 AMP FAST RECOVERY SILICON DIODES FEATURES Low cost Low leakage Low forward voltage drop MECHANICAL SPECIFICATION ACTUAL SIZE OF DO-41 PACKAGE SERIES RP100 - RP110 DO - 41 LL BD (Dia) High current capacity Fast switching for high efficiency BL Color Band Denotes Cathode RoHS COMPLIANT MECHANICAL DATA LL Case: JEDEC DO-41, molded epoxy (U/L Flammability Rating 94V-0) Terminals: Plated axial leads Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Color band denotes cathode Mounting Position: Any Weight: 0.012 Ounces (0.34 Grams) LD (Dia) Sym BL BD LL LD Minimum In mm 0.160 0.103 1.00 0.028 4.1 2.6 25.4 0.71 Maximum In mm 5.2 0.205 0.107 0.034 2.7 0.86 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 2HG A 6F 3§©! # ©©! £ ¡ #§1 ©§©& 6! ¤9 £ ¤§§¡ ¡ 3©E  £¥ #$) ! 7¨1¡ % ) " )#& 2©§& 6! ¤9 £ ©©¥ ¤3#3§ ¤9 §¨ ¤¨ ! # 7 D©A @ ! 9 8©0 ©§' 7©§¨ §©"6! ©¥ 54 1¡ % )$1 &! £ CB 7 ¡ ( %¡ ! ¡' %¦ ¤ 21 ¤)!" 3§ ¤! 0 §§§©¨! ¨ ¤( ©§' §§¨ ! ©! #$ £ ¡ ©§" §! ©£ !  ©  £ ©§¥ ¤ £ ¢  #! £& ¨ %¥$ #!  £ ¥ ¤ ¡   ¡ ¨¦ ¡ PARAMETER (TEST CONDITIONS) Series Number SYMBOL 5H¡È ËËÊ É RATINGS ìëë ê è çæå ä â áàß Þ Ü ¢5H¡é¢¡ã¢¡Ýۙ¢¡Ö×8¢ŸÑ6¢ŸÌ ÚÙ Ø ÕÔÓ Ò Ð ÎÏÎ Í UNITS H25 † … „ ƒ ‚ € ~ } 8¢hzx wt s u|{y v u Operating and Storage Temperature Range TT » ™š 3–D ™” 55’DD¢‹ 5¢ ‘ ¢¢3¹¢¢DD‹¢ª ‡ Ž ” ¶ ‘˜ •š–º ‘œ “µ ¸•¨¨ª ‰ ’ ” ‘¢Ÿ™¢¡™¦3 ” ™š¢ŸD’ ¢Dµ3 › D “ 5´™¢³²H°ŸD›D ™˜¢3D¯›¢® ‡ šµ ·¶š  ‘ µ Ž Ž ‘ ´ ± ¯ˆ”   Ž ’ ‰ ›‹¬ ©¢­ 35• ‹DDª D‹‹¢Œ 5¢¢ ¥3D ¥¢¢  ¢5¤z›• D ¢•™™¡™5š “‹Œ ” Ÿ5¢•D ™¢›š ‹•™š “ ”3¢™˜ zD¢¢ 3’ 53 D¢‹ ¢¢‹3ˆ ‡ 6™¿8H¼ ‰ ‡© “ ¬« ©¨ § ’ ”¦• ‘   ‘  • Žš £¢ š ” ˜š      “ ž” “œ  ” –• — –• ” “’ Ž‘ ŽŒŠ ‰ ÁÀ ¾ ½ baY X 5`¢W x Typical Junction Capacitance (Note 2) C r ¢q VU DT Typical Thermal Resistance, Junction to Ambient (Note 1) R £& ' R 6Q I °C/W pF °C r Å Ä Maximum Average DC Reverse Current At Rated DC Blocking Voltage @ T = 25 C @ T = 100 C o p n S 6S Maximum Reverse Recovery Time (I =0.5A, I =1A, I =0.25A) à  T %¦$" !£¦ #     ¦£© ml 5k t 5s Maximum Forward Voltage at 1 Amp DC Ç hÇ Ç Æ V j h i f g wv ¢u I c I e Average Forward Rectified Current @ T = 75 C (Lead length = 0.375 in. (9.5 mm)) Peak Forward Surge Current ( 8.3 mSec single half sine wave superimposed on rated load) ig 6hg Maximum Peak Recurrent Reverse Voltage P I V ¨¨ ££¨¢§ ˜˜ — ÿÿ 8þ 8™ dd 8 ‘‘ øø ¢÷ ñ ò fe 6d Maximum RMS Voltage V ¥¥ ¦£¤ –• ” ýü 88û ‡ ‰ˆ 8¢„ †… ö õ ï ð q hp Maximum DC Blocking Voltage V ¡¡ ££¡¢  ““ ’ úú 8ù 8‚ ƒƒ 8y €€ ôô ¢ó í î VOLTS AMPS VOLTS nS A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. FSDP-103-2B 1 AMP FAST RECOVERY SILICON DIODES RATING & CHARACTERISTIC CURVES FOR SERIES RP100 - RP110 1.2 Average Forward Current, Io (Amperes) 0.8 0.6 0.4 FIGURE 1. FORWARD CURRENT DERATING CURVE Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT tt 65s Instantaneous Forward Current (Amperes) 1.0 Capacitance, pF 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC W W Reverse Voltage, (Volts) FIGURE 4. TYPICAL JUNCTION CAPACITANCE 0.5 (+) D.U.T. (-) 0.0 (-) W (+) -0.5 FIGURE 5. REVERSE RECOVERY TEST SETUP AND TIME CHARACTERISTIC Y X W V U ST R Q IP H H26 Ì ¢Ë Ê ½ È ÇÆÅ Ä ¢É £¹ ¢5rpà  ºÁÀ¿ º »»º ¢¬†h¾½ ¼ p¬¦¹ -1.0  ¡²± ¶¸ ¢ ® ¦­ ª œ · ± ¨ ¦ ¥¤ ™ ¢ ž   ž œ s25!Ÿ!rž Ÿ¤5Ÿ2ž ¡ sž ® 2«¬Ÿ © 2§ ¡ŸŸ¶ !s œ¡ rŸ p›5š ´ ˜ µª © ¡²±° ¯ ™ 5s´ ´ ³255Ÿž¦!¢rž Ÿ¤5Ÿ2ž ¡ œ¬Ÿ2ª5¤ œ © 2§ ¡¥ 2s!s œ¡ rŸ p›5š ™ ˜ ® ¦­ ª  « ¨¦ ¤£ ¢ ž   ž œ — ”“ p–5•5¦¢’ Í sÍ T i 5h g ¢e f 0.01 0.4 d r ¢p q ˆ ¢¢!hg ¢!f5™ …ig “„e d —m ˜–6–6yy” “6’ $‰¢‡ …†¦ƒ •v ‘ ˆ„ k xv  lj ‚€6ywu 0.1 44 653 1 20 ) Ambient Temperature, C G 0 0 50 100 150 F 5E 0.2 65‹wŠ t‘  Ž Œ  w¢‰5ˆ‡w†† r£„ 6!$yy~ ¢| ‚ …€ ƒ‚ €  } {z xw ††y 5uvpsrpn toqo @ ¢9 1.0 Peak Forward Surge Current (Amperes) c 2b ( a 2` 8 67 B 6A D 6C