SBU6B

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BSBU-600-1D 6 AMP SILICON BRIDGE RECTIFIERS FEATURES MECHANICAL SPECIFICATION ° ¼ ºª¦ «ª · X½ 9¤»§X¤¹¯¬¸cµ¶¯3²±¯S•¬F¨©§X¤ ´³¤ °®ª­«ª ¦¥ C C1 C2 D D3 _ D2 + D D1 A A1 L L1 B1 B ¨ ¡$¤ 3¢ §¦ ¥£ ž¡ Ÿž š ›   ¡’¤œ ¡š h f g W U V e ca ¡YX db `   Œ  ‘ ¡’ŽŽ ¡Œ ™ 3¤s• ¡¤’ ˜—– ”“ †… „ƒ ‚ € ƒ ¡’ ¡ Š ¡Š ‹ ‰ ‡ ˆ ~~ |{ zv xv } ¡’y ¡wu sq ¡¤n trr po t sr q i p fi g h ¡f m 3¤j lk ‘• “‘ †‰ ‡ ¤” ¡’ˆ ¡† e 3™ d ˜ ¡– — « 3© ª QP H (I ¡G ¤D ¡B FE C A 39 @ 42 0 ¤31 ¡)  ¡  ' &%# (# ¡$" ¡ ! ÿ£   þü ¨ý ¢û ÈÇ ÑÓ Ò ¨$Ó ¦Ñ ¨¤¢ ¡ÿ ¨Æ ¦Æ åä ãá àß ÞÜ Û Ù× ¨$á ¦â¦1Ü ¦Ý¨Ú ¨Ø¨Ö ¨Ô ÖÕ ÷¨¨ö ¦ô $BÎ ¦Ì ôõ ÐÏ Í Ë ¢É Ê ú ¦ø ù ð¨¨ò ¦â¨ï¨î ¦ìê ¦è ó ñð ë íë é æ ¦æ ç ÆÄ Åà ¿ ®½ ¾ ÉÈ ÊÅÇ Â ±À Á ³8…¸ · ¼»º¹ ¶´°²° ­¯ ­ …µ³³±¬ 33¯ ®¬ ÍÌ …µË VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE SURGE OVERLOAD RATING TO 250 AMPS PEAK IDEAL FOR PRINTED CIRCUIT BOARD APPLICATIONS THRU-HOLE FOR EASY HEAT SINK MOUNTING UL RECOGNIZED - FILE #E124962 RoHS COMPLIANT MECHANICAL DATA T 3S R …ƒ „ ‚€  y x w v u 7 86 5   © § ¨¦ ¥ Case: Molded Epoxy (UL Flammability Rating 94V-0) Terminals: Round silver plated pins Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on case Mounting Position: Any. Max. mounting torque = 5 in lb Weight: 0.3 Ounces (8 Grams) _ + SERIES SBU6A - SBU6M MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS … t Žymo |}‚ |z ‡r„l ~ z n‚ { ‚| …„l ~ ¤ ‰ qYqsz | ss&z m l Yq„ ssqs q nŒ m qsl sl Ys¢qs z nŒ m sqo &z nŒ m r sr z | ‡ ‹8s‰ ˆ¦sqr qsz ~qo 1†¨q nz ƒ qqqsr¢z r n¢ sq€ q&qr z sY&z |Y} m l sqgqz sm Yz Yygs™w &u Ym ¢sq no m Bk ‚}„ n| n Š ‡z l€{ p n …„ n‚z{ |z m r ~o} |z{ x m o n xl v t l rp l PARAMETER (TEST CONDITIONS) Series Number SYMBOL SBU 6A V V Ï Ñ RATINGS SBU 6B 100 70 100 SBU 6D 200 140 200 SBU 6G 400 280 400 6 6 250 0.95 (Typical < 0.90) 1 50 16.0 3.1 2500 -55 to +150 SBU 6J 600 420 600 SBU 6K 800 560 800 SBU 6M 1000 700 1000 UNITS Minimum Insulation Breakdown Voltage (Circuit to Case) Õ V E23         t ˆB‡ –8w8‘B‰ ˆ q¨‰‡1rj‚¨9‚ p1i‰3¢ˆ¨… ™‡8„8‰ – ˆ¨hB9“B‘ p qB‘1$…3G1BX1¨ p ¨9B8¤i B•B¨¨19$…8„”89‚ B1r 3¨…8 p„ ” 131‘ 1BBgiY‡ BBw™BXr q S™1‘ p1181r9¨…X¨1 p 1¦q ¨… q h ‚– w h ‚ ‘‰ ‡“ ˆ’ ‘‡‡ q‡’ ‘h…† ‚ ‰ ˆ‡ q ‘ pw “ pwhf ˆ„ ed p i ˜ wq‰‡ ‘ ‡“ ˆ’ ” –… q ‘ ” ‰ ” “ ˆ’ ‘‰ B9r 1“18‡ •8‡ 3‡1¨ p ¨G1BXw18‰8¦B‡11$…1ƒ t¨BW9BY€ y$x8Fv8u B3r q Si †ˆ †† „ xw ‚ ‚ t w ts p — BV " ( B¨4¢fe¨dG$980 8¨$331¨ '( &$B@ %` # 64 ( 7654 2 0) %#" 0 ` 1c1¨6 9¨5 819BQ8Y! BXW28Q8T B3UBQ8T BC SR8Q ¨P D88I A83FDBH AGFDC B3$980 8¨$331¨ '( &$! ¨¥¦¤¢  7 ab 25 ' 2 a`" 2 T AI E AV E 2 A '7 C IE ! E A@ 64 ( 7654 2 0) %#" ©§ £ ¡ 99BT Bh F888V BI " 2 2 A DTg A Ø× (3Ö Operating and Storage Temperature Range T ,T Ô¡ ÒÓ ž 8Yœ ›š Y™ R R ˜ — I °C/W VOLTS °C Ÿ @ T = 25 C Maximum Average DC Reverse Current At Rated DC Blocking Voltage @ T = 100 C Junction to Ambient (Note 2) Typical Thermal Resistance Junction to Case (Note 3) “ 1’ Maximum Forward Voltage (Per Diode) at 6 Amps DC V –• &B” I ¾ T = 100 C (Notes 1, 3) Average Forward Rectified Current T = 40 C (Note 2) Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). T = 150 C àF Maximum Peak Recurrent Reverse Voltage Î Ð ÁÀ ™¿ I Maximum RMS Voltage Å FÄ Maximum DC Blocking Voltage V 50 35 50 VOLTS AMPS £ ¡   ¢ ‘  VOLTS A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BSBU-600-2B 6 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES SBU6A - SBU6M ëê ìé 10.0 Average Forward Current, Io (Amperes) Peak Forward Surge Current (Amperes) ÷ NOTE 1 8.0 60Hz Resistive or Inductive Loads 6.0 Case, T 4.0 Ambient, T 2.0 0 Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT V ¥U Instantaneous Forward Current Amperes Instantaneous Reverse Current, I (Microamperes) 10 T = 100 C R 6P Q NOTE 3 1.0 T = 25 C %©# $ CB@ ¥¢A¥©864 997 5 3 ¥2 1) 0¥' ( & FE D D 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE  ¥ Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS NOTES (1) Case Temperature, T With Bridge Mounted on 2.6" x 1.4" x 0.06" Thick (6.5cm x 3.5cm x 0.15cm) Aluminum Plate Ambient Temperature, T With Bridge Mounted on PC Board With 0.5" Sq. (12mm Sq.) Pads and Bridge Lead Length of 0.375" (9.5mm) (2) T = 150 C ý ü úû ³ù ú Capacitance, pF Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE (3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle (4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p ÿ þ á à ß Þ Ü Ý ÜÛ Ú E24 çç èæ ä åã I G H T ¢S â ö 0 50 100 150 îî ìí ñð ìèï óó ìèò õ ô ý ü ¨¥©§ ¨ ! "  Ù ø NOTE 2 ©  ¦ ¤¤ ¥¢£ ¡ ¢