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HMLQ20161T-2R2MDR

HMLQ20161T-2R2MDR

  • 厂商:

    DELTA(台达)

  • 封装:

    0806(2016公制)

  • 描述:

    固定电感器 0806 2.2µH ±20% 2.2A 150mΩ

  • 数据手册
  • 价格&库存
HMLQ20161T-2R2MDR 数据手册
CYNTEC CO., LTD. 乾坤科技股份有限公司 DOCUMENT : HMLQ20161T-000 REVISION : A2 PAGE : 1 OF 3 Power Choke Coil HMLQ20161T MDR type  Features High performance (Isat) realized by metal dust core. Low profile 2.0 mm x 1.6 mm x 1.0 mm Low loss realized with low DCR 100% lead (Pb) free meet RoHS standard :  Application DC/DC converter for CPU in Notebook PC Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc.. Thin type on-board power supply module for exchanger VRM for server  Outline Dimensions L W P Code Dimensions L 2.0 ± 0.1 W 1.6 ± 0.1 T 1.0 Max. P 0.5 ± 0.2 Unit : mm T  Recommend Land Pattern Dimensions The customer shall determine the land dimensions shown below after confirming and safety. B A C A 1.6 B 0.7 C 2.0 Unit : mm Nov., 2017 CYNTEC CO., LTD. 乾坤科技股份有限公司  DOCUMENT : HMLQ20161T-000 REVISION : A2 PAGE : 2 OF 3 Marking The point on the top surface represents winding direction of choke. Upside of Chip PIN 1 PIN 2 Coil clockwise around  Specifications Part Number HMLQ20161T-R33MDR HMLQ20161T-R47MDR HMLQ20161T-R68MDR HMLQ20161T-1R0MDR HMLQ20161T-1R5MDR HMLQ20161T-2R2MDR L0 Inductance ( µH ) @ (0A) Typical 0.33 0.47 0.68 1.0 1.5 2.2 21 26 40 49 99 142 Heat Rating Current DC Amps. Idc ( A ) Saturation Current DC Amps. Isat ( A ) Maximum Typical Maximum Typical Maximum 26 32 50 59 109 150 4.80 4.40 3.40 3.20 2.35 2.20 4.40 4.05 3.10 3.00 2.05 2.00 5.70 4.90 4.60 3.90 3.00 2.65 5.20 4.50 4.00 3.65 2.70 2.45 Rdc ( mΩ) :If you require another part number please contact with us. **:Inductance Tolerance ± 20% Note 1.: All test data is referenced to 25℃ ambient. Note 2.: Test Condition:1MHz, 1.0Vrms Note 3.: Idc : DC current (A) that will cause an approximate △T of 40℃ Note 4.: Isat : DC current (A) that will cause L0 to drop approximately 30% Note 5.: Operating Temperature Range -55℃ to + 125℃ Note 6.: The part temperature (ambient + temp rise) should not exceed 125℃ under the worst case operating * conditions. Circuit design, component placement, PCB trace size and thickness, airflow and other cooling Note 7. : provision all affect the part temperature. Part temperature should be verified in the end application. The rated current as listed is either the saturation current or the heating current depending on which value is lower. Nov., 2017 CYNTEC CO., LTD. 乾坤科技股份有限公司  : HMLQ20161T-000 REVISION : A2 PAGE : 3 OF 3 Current Characteristic 100 60 0.14 TEMP. RISE( ) ℃ 40 0.07 20 0.00 0 0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 0.50 80 0.40 60 0.30 INDUCTNACE(µH) 0.20 TEMP. RISE( ) ℃ 40 20 0.10 0.00 7.2 0 0.0 0.6 1.2 1.8 2.4 3.0 DC BIAS(Amps) 100 60 INDUCTANCE(µH) TEMP. RISE( ℃) 40 ℃ 20 0.14 0 0.00 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 60 0.60 INDUCTNACE(µH) 0.40 TEMP. RISE( ) ℃ 40 20 0.30 0.00 0 1.0 1.5 2.0 DC BIAS(Amps) 2.5 3.0 3.5 ℃ INDUCTANCE(µH) ℃ 0.5 ℃ 20 0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 HMLQ20161T-2R2MDR 90 2.25 TEMP. RISE( ) INDUCTANCE(µH) 60 0.0 40 0.20 2.70 100 1.20 0.60 100 80 0.0 80 TEMP. RISE( ) 6.6 DC BIAS(Amps) 1.50 INDUCTANCE(µH) 6.0 0.00 5.4 HMLQ20161T-1R5MDR 0.90 5.4 0.80 DC BIAS(Amps) 1.80 4.8 1.00 INDUCTANCE(µH) 80 0.56 0.28 4.2 HMLQ20161T-1R0MDR 1.20 TEMP. RISE( ) INDUCTANCE(µH) 0.70 0.42 3.6 DC BIAS(Amps) HMLQ20161T-R68MDR 0.84 ℃ TEMP. RISE( ) INDUCTANCE(µH) 100 75 1.80 60 INDUCTNACE(µH) 1.35 45 ℃ TEMP. RISE( ) 0.90 30 0.45 15 0.00 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 DC BIAS(Amps) Nov., 2017 ℃ TEMP. RISE( ) 0.21 ℃ TEMP. RISE( ) 80 0.28 INDUCTANCE(µH) 0.35 HMLQ20161T-R47MDR 0.60 TEMP. RISE( ) HMLQ20161T-R33MDR 0.42 INDUCTANCE(µH) DOCUMENT
HMLQ20161T-2R2MDR 价格&库存

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