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SDEB12101T-1R0MSD

SDEB12101T-1R0MSD

  • 厂商:

    DELTA(台达)

  • 封装:

    非标准

  • 描述:

    固定电感器 Nonstandard 1µH ±20% 1.05A 201mΩ

  • 数据手册
  • 价格&库存
SDEB12101T-1R0MSD 数据手册
CYNTEC CO., LTD. 乾坤科技股份有限公司 DOCUMENT : SDEB12101T-000 REVISION : A4 PAGE : 1 OF 4 Sealed Choke Coil SDEB12101T MSD type  Features : Low profile 1.25mm x 1.0mm x 1.0mm Low coil resistance with large currents. High magnetic shield construction should actualize high resolution for EMC protection. 100% lead (Pb) free meet RoHS standard  Application Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc..  Outline Dimensions W L Code Dimensions (mm) L 1.0 ± 0.2 W 1.25 ± 0.2 T 1.0 Max T Note  :This graph is in regard to outline dimensions spec. For outer appearance, please refer to actual product. Recommend Land Pattern Dimensions The customer shall determine the land dimensions shown below after confirming and safety. B A C A 1.2 B 0.4 C 1.4 Unit : mm Aug., 2017 CYNTEC CO., LTD. 乾坤科技股份有限公司  DOCUMENT : SDEB12101T-000 REVISION : A4 PAGE : 2 OF 4 Specifications L0 Inductance ( µH ) @ (0A) Typical SDEB12101T-R22MSD 0.22 SDEB12101T-R33MSD Heat Rating Current DC Amps. Idc ( A ) Saturation Current DC Amps. Isat ( A ) Maximum Typical Maximum Typical Maximum 50 60 1.90 1.71 2.40 2.16 0.33 66 80 1.70 1.53 2.10 1.90 SDEB12101T-R47MSD 0.47 80 96 1.55 1.40 1.55 1.40 SDEB12101T-1R0MSD 1.0 167 201 1.05 0.95 1.15 1.04 SDEB12101T-1R5MSD 1.5 230 276 0.90 0.81 0.82 0.74 SDEB12101T-2R2MSD 2.2 281 338 0.71 0.64 0.68 0.61 SDEB12101T-3R3MSD 3.3 430 516 0.58 0.52 0.52 0.47 SDEB12101T-4R7MSD 4.7 623 748 0.48 0.43 0.46 0.41 SDEB12101T-100MSD 10.0 1,250 1,500 0.36 0.32 0.35 0.32 Part Number Rdc ( mΩ) : **:Inductance Tolerance ± 20% Note 1.: All test data is referenced to 25℃ ambient. Note 2.: Test Condition:1MHz, 1.0Vrms Note 3.: Idc : DC current (A) that will cause an approximate △T of 40℃ Note 4.: Isat : DC current (A) that will cause L0 to drop approximately 30% Note 5.: Operating Temperature Range -55℃ to + 125℃ Note 6.: The part temperature (ambient + temp rise) should not exceed 125 ℃ under the worst case operating * If you require another part number please contact with us. conditions. Circuit design, component placement, PCB trace size and thickness, airflow and other cooling provision all affect the part temperature. Part temperature should be verified in the end application. Note 7. : The rated current as listed is either the saturation current or the heating current depending on which value is lower. Aug., 2017 CYNTEC CO., LTD. 乾坤科技股份有限公司 : A4 PAGE : 3 OF 4 80 50 INDUCTANCE(µH) ℃) 40 30 0.08 20 0.04 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 DC BIAS(Amps) 2.4 2.7 70 40 TEMP. RISE( 30 ℃) 0.20 20 0.10 0.00 0.8 1.0 1.2 1.4 1.6 1.8 ℃ 10 0 0.3 0.6 0.9 1.2 0.20 0 0.00 TEMP. RISE( ℃) 2.25 1.20 60 TEMP. RISE( ) INDUCTANCE(µH) 45 INDUCTANCE(µH) 75 ℃) 0 0.2 0.4 0.6 0.8 1.0 DC BIAS(Amps) 15 0.45 0 0.00 TEMP. RISE( ℃) 40 1.40 20 0.70 0.00 0 0.0 \ 0.1 0.2 0.3 0.4 0.5 DC BIAS(Amps) 0.6 0.7 0.8 0.9 TEMP. RISE( 30 ℃) ℃ 0 5.00 INDUCTANCE(µH) 2.10 40 10 80 ℃ INDUCTANCE(µH) 20 6.00 60 INDUCTANCE(µH) 50 100 2.80 70 60 0.0 TEMP. RISE( ) INDUCTANCE(µH) 3.50 1.6 0.90 0.30 SDEB12101T-3R3MSD 1.4 SDEB12101T-2R2MSD 1.35 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 DC BIAS(Amps) 1.2 1.80 0.60 0.00 40 ℃ 20 0.0 1.50 INDUCTANCE(µH) 60 INDUCTANCE(µH) 2.0 ℃ 100 0.40 2.70 4.20 2.4 80 0.60 90 TEMP. RISE( 2.1 0.80 10 SDEB12101T-1R5MSD 0.90 1.8 SDEB12101T-1R0MSD DC BIAS(Amps) 1.80 1.5 1.00 INDUCTANCE(µH) INDUCTANCE(µH) 0.6 30 20 1.20 TEMP. RISE( ) 0.40 0.4 40 0.14 0.0 50 0.2 ℃) 0.00 60 0.0 TEMP. RISE( ℃ DC BIAS(Amps) 0.50 0.30 0.21 3.0 SDEB12101T-R47MSD 0.60 50 INDUCTANCE(µH) 0.07 10 0.00 60 0.28 TEMP. RISE( ) TEMP. RISE( 70 TEMP. RISE( ) 0.12 ℃ INDUCTANCE(µH) 0.16 80 0.35 TEMP. RISE( ) 60 SDEB12101T-R33MSD 0.42 70 TEMP. RISE( ) SDEB12101T-R22MSD 0.20 INDUCTANCE(µH) REVISION Current Characteristic 0.24 INDUCTANCE(µH) : SDEB12101T-000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 DC BIAS(Amps) 0.8 0.9 1.0 1.1 100 SDEB12101T-4R7MSD 80 4.00 60 INDUCTANCE(µH) 3.00 TEMP. RISE( ℃) 40 2.00 20 1.00 0.00 0 0.00 0.10 0.20 0.30 0.40 0.50 0.60 ℃ TEMP. RISE( )  DOCUMENT 0.70 DC BIAS(Amps) Aug., 2017 CYNTEC CO., LTD. 乾坤科技股份有限公司 SDEB12101T-100MSD 10.0 80 INDUCTANCE(µH) TEMP. RISE( ℃) REVISION : A4 PAGE : 4 OF 4 100 8.0 6.0 : SDEB12101T-000 60 40 4.0 ℃ TEMP. RISE( ) INDUCTANCE(µH) 12.0 DOCUMENT 20 2.0 0.0 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 DC BIAS(Amps) Aug., 2017
SDEB12101T-1R0MSD 价格&库存

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