1N4454

1N4454 SILICON SWITCHING DIODE Features · · · · High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version (LL4454) A B A D C Mechanical Data · · · · · Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.13 grams (approx.) DO-35 Dim A B C D Min 25.40 ¾ ¾ ¾ Max ¾ 4.00 0.60 2.00 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol VRRM VRWM VR IFM IO IFSM Pd RqJA Tj, TSTG 1N4454 75 300 150 1.0 2.0 400 300 -65 to +175 Unit V mA mA A mW K/W °C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t £ 1.0s @ t = 1.0ms Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic Maximum Forward Voltage Drop Maximum Peak Reverse Current Junction Capacitance Reverse Recovery Time @ TA = 25°C unless otherwise specified Symbol VFM IRM Cj trr Min ¾ ¾ ¾ ¾ Typ ¾ ¾ 4.0 4.0 Max 1.0 100 ¾ ¾ Unit V nA pF ns Test Condition IF = 10mA VR = 50V VR = 0V, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Note: 1. Valid provided that leads are kept at ambient temperature. DS12016 Rev. F-2 1 of 1 1N4454