1N5817_1

1N5817_1

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    1N5817_1 - 1.0A SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5817_1 数据手册
SPICE MODELS: 1N5817 1N5818 1N5819 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free Finish, RoHS Compliant (Note 5) A B A C D Mechanical Data · · · · · · · · Case: DO-41 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish ¾ Tin. Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Ordering Information: See Page 2 Marking: Type Number and Date Code Weight: 0.3 grams (approximate) Dim A B C D DO-41 Plastic Min 25.40 4.06 0.71 2.00 Max ¾ 5.21 0.864 2.72 All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TL = 90°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Forward Voltage (Note 2) Peak Reverse Leakage Current at Rated DC Blocking Voltage (Note 2) Typical Total Capacitance (Note 3) Typical Thermal Resistance Junction to Lead (Note 4) Typical Thermal Resistance Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. 4. @ TA = 25°C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM CT RqJL RqJA Tj, TSTG 1N5817 20 14 1N5818 30 21 1.0 25 1N5819 40 28 Unit V V A A @ IF = 1.0A @ IF = 3.0A @ TA = 25°C @ TA = 100°C 0.450 0.750 0.550 0.875 1.0 10 110 15 50 -65 to +125 0.60 0.90 V mA pF °C/W °C Measured at ambient temperature at a distance of 9.5mm from the case. Short duration test pulse used to minimize self-heating effect. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm) copper pads. 5. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23001 Rev. 8 - 2 1 of 3 www.diodes.com 1N5817-1N5819 ã Diodes Incorporated 1.0 IF, NSTANTANEOUS FORWARD CURRENT (A) 30 I(AV), AVERAGE OUTPUT CURRENT (A) 0.8 1N5817 10 1N5818 0.6 1N5819 0.4 1.0 0.2 Single Pulse Half-Wave 60 Hz Resistive or Inductive Load Tj = 25ºC Pulse Width = 300 ms 2% Duty Cycle 0 10 40 60 80 100 120 140 150 TL, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 25 0.1 0 0.5 1.0 1.5 2.0 2.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 Tj = 25ºC f = 1MHz Vsig = 50mV p-p IFSM, PEAK FORWARD SURGE CURRENT (A) 20 15 CT, TOTAL CAPACITANCE (pF) 8.3ms Single Half Sine-Wave 100 10 5 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current 10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance Ordering Information Device 1N5817-B 1N5817-T 1N5818-B 1N5818-T 1N5819-B 1N5819-T (Note 6) Packaging DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 Shipping 1K/Bulk 5K/Tape & Reel, 13-inch 1K/Bulk 5K/Tape & Reel, 13-inch 1K/Bulk 5K/Tape & Reel, 13-inch Notes: 6. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf DS23001 Rev. 8 - 2 2 of 3 www.diodes.com 1N5817-1N5819 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS23001 Rev. 8 - 2 3 of 3 www.diodes.com 1N5817-1N5819
1N5817_1
物料型号: - 1N5817、1N5818、1N5819

器件简介: - 这些是肖特基整流器,具有保护瞬态的防护环结构,低功耗、高效率,高浪涌能力和低正向电压降,适用于低电压、高频逆变器、自由轮和极性保护应用。

引脚分配: - 封装形式为DO-41,具体尺寸参数如下: - A: 25.40mm - B: 4.06mm至5.21mm - C: 0.71mm至0.864mm - D: 2.00mm至2.72mm

参数特性: - 包括但不限于: - 反向重复峰值电压(VRRM):1N5817为20V,1N5818为30V,1N5819为40V - 反向RMS电压(VR(RMS)):1N5817为14V,1N5818为21V,1N5819为28V - 平均整流输出电流(Io):1N5817为1.0A - 非重复峰值正向浪涌电流(IFSM):1N5817为25A - 正向电压(VFM):不同电流下1N5817为0.45V至0.75V,1N5818为0.55V至0.875V,1N5819为0.60V至0.90V - 反向漏电流(IRM):1N5817为1.0mA至10mA - 典型总电容(CT):1N5817为110pF - 典型热阻(RθJL):1N5817为15°C/W - 典型结到环境热阻(RθJA):1N5817为50°C/W

功能详解: - 这些器件用于低电压、高频逆变器、自由轮和极性保护应用,能够处理高浪涌电流和低正向电压降。

应用信息: - 适用于低电压、高频逆变器、自由轮和极性保护。

封装信息: - 封装类型为DO-41,有散装(1K/Bulk)和卷带封装(5K/Tape & Reel, 13-inch)两种包装方式。
1N5817_1 价格&库存

很抱歉,暂时无法提供与“1N5817_1”相匹配的价格&库存,您可以联系我们找货

免费人工找货
1N5817-T
  •  国内价格
  • 5+0.59651
  • 50+0.4997
  • 150+0.45125

库存:500