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1N5819HW

1N5819HW

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    1N5819HW - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
1N5819HW 数据手册
SPICE MODEL: 1N5819HW Lead-free 1N5819HW 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • • • • • • Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free/RoHS Compliant (Note 1) SOD-123 Dim A B H G D Min 3.55 2.55 1.40 — 0.45 0.25 — 0° Max 3.85 2.85 1.70 1.35 0.65 — 0.10 8° Mechanical Data • • • • • • • • • • Case: SOD-123 Plastic Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Polarity: Cathode Band Leads: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Marking: Date Code and Type Code, See Page 3 Type Code: SL Ordering Information: See Page 3 Weight: 0.01 grams (approximate) J C D E A B 0.55 Typical 0.11 Typical C E G H J α All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TL = 90°C Repetitive Peak Forward Current tp ≤ 1ms, δ ≤ 0.5 Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Power Dissipation (Note 2) Typical Thermal Resistance Junction to Ambient (Note 2) Operating and Storage Temperature Range Notes: Symbol @ IR = 1.0mA VRRM VRWM VR VR(RMS) IO IFRM IFSM Pd RθJA Tj, TSTG Value 40 28 1.0 1.5 25 450 222 -65 to +125 Unit V V A A A mW °C/W °C 1. No purposefully added lead. 2. Device mounted on FR-4 PC Board, 2"x2", 2 oz. Copper, single sided, Cathode pad dimensions 0.75"x1.0", Anode pad dimensions 0.25"x1.0". DS30217 Rev. 12 - 2 1 of 3 www.diodes.com 1N5819HW © Diodes Incorporated Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 3) Forward Voltage @ TA = 25°C unless otherwise specified Symbol V(BR)R VF Min 40           Typ       10 1 15 1.5 50 Max  0.320 0.450 0.750 1.0 10 50 2 75 3  Unit V V mA mA µA mA µA mA pF Test Condition IR = 1.0mA IF = 0.1A IF = 1.0A IF = 3.0A VR = 40V, TA = 25°C VR = 40V, TA = 100°C VR = 4V, TA = 25°C VR = 4V, TA = 100°C VR = 6V, TA = 25°C VR = 6V, TA = 100°C VR = 4V, f = 1.0MHz Reverse Leakage Current (Note 3) IR Total Capacitance Notes: 3. Short duration pulse test used to minimize self-heating effect. CT 1.0 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 IO, AVERAGE OUTPUT CURRENT (A) 0.8 1 TA = 125ºC 0.6 0.1 TA = 100ºC 0.4 0.01 TA = 75ºC 0.2 Single Pulse Half-Wave 60 Hz Resistive or Inductive Load 0.001 TA = 25ºC TA = 0ºC TA = -65ºC 0 10 40 60 80 100 120 140 TT, TERMINAL TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 25 IFSM, PEAK FORWARD SURGE CURRENT (A) 0.0001 0 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 f = 1MHz 20 15 CT, TOTAL CAPACITANCE (pF) 8.3ms Single Half Sine-Wave 100 10 5 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current 10 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance DS30217 Rev. 12 - 2 2 of 3 www.diodes.com 1N5819HW ©Diodes Incorporated 150 10,000 TA = 125ºC TA, AMBIENT TEMPERATURE (ºC) 125 1000 TA = 75ºC TA = 100ºC 100 100 TA = 25ºC 10 75 1 TA = 0ºC 50 0.1 TA = -65ºC 25 1 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Fig. 5 Typical Safe Operating Area .01 0 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 6 Typical Reverse Characteristics Ordering Information Device 1N5819HW-7-F Notes: (Note 4) Packaging SOD-123 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information SL Date Code Key Year Code Month Code Jan 1 2001 M Feb 2 2002 N March 3 Apr 4 SL = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2003 P May 5 YM 2004 R Jun 6 2005 S Jul 7 Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30217 Rev. 12 - 2 3 of 3 www.diodes.com 1N5819HW ©Diodes Incorporated
1N5819HW 价格&库存

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1N5819HW
  •  国内价格
  • 5+0.1042
  • 20+0.0952
  • 100+0.0862
  • 500+0.0772
  • 1000+0.073
  • 2000+0.07

库存:2775

1N5819HW-MS
    •  国内价格
    • 1+0.07268
    • 100+0.06792
    • 300+0.06318
    • 500+0.05842
    • 2000+0.05605
    • 5000+0.05462

    库存:3411

    1N5819HW-7-F
    •  国内价格
    • 10+0.14738
    • 50+0.13633
    • 200+0.12712
    • 600+0.11791
    • 1500+0.11054
    • 3000+0.10593

    库存:26426

    1N5819HWQ-7-F
    •  国内价格
    • 1+0.542
    • 10+0.522
    • 100+0.462
    • 500+0.45

    库存:3000

    1N5819HW1-7-F
    •  国内价格
    • 10+0.62581
    • 50+0.57759
    • 200+0.53741
    • 600+0.49723
    • 1500+0.46509
    • 3000+0.445

    库存:0