2DA1774QLP

2DA1774QLP 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Ultra-Small Leadless Surface Mount Package Complementary NPN Type Available (2DC4617QLP) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free, "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0008 grams (approximate) C DFN1006-3 B E Bottom View Device Symbol B C E Top View Device Schematic Ordering Information (Note 3) Product 2DA1774QLP-7 2DA1774QLP-7B Notes: Marking 8A 8A Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 2DA1774QLP-7 2DA1774QLP-7B 8A Top View Dot Denotes Collector Side 8A Top View Bar Denotes Base and Emitter Side 8A = Product Type Marking Code 2DA1774QLP Document number: DS31438 Rev. 4 - 2 1 of 4 www.diodes.com January 2011 © Diodes Incorporated 2DA1774QLP Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current Symbol VCBO VCEO VEBO IC ICM Value -50 -40 -5.0 -100 -200 Unit V V V mA mA Thermal Characteristics Characteristic Power Dissipation @TA = 25°C (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) Cobo fT Min -50 -40 -5.0 ⎯ ⎯ 120 ⎯ ⎯ 100 Max ⎯ ⎯ ⎯ -100 -5 -100 270 -0.2 5.0 ⎯ Unit V V V nA μA nA ⎯ V pF MHz Test Condition IC = -50μA, IE = 0 IC = -1mA, IB = 0 IE = -50μA, IC = 0 VCB = -30V VCB = -30V, TA = 150°C VEB = -4.0V VCE = -6.0V, IC = -1.0mA IC = -50mA, IB = -5.0mA VCB = -12V, f = 1.0MHz, IE = 0 VCE = -12V, IC = -2.0mA, f = 100MHz 4. Part mounted on FR-4 PCB with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 5. Short duration pulse test used to minimize self-heating effect. 300 100 IB = -0.5mA -IC, COLLECTOR CURRENT (mA) PD , POWER DISSIPATION (mW) 250 80 IB = -0.4mA 200 60 IB = -0.3mA 150 40 IB = -0.2mA 100 50 RθJA = 500 °C/W 20 IB = -0.1mA 0 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 150 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 2DA1774QLP Document number: DS31438 Rev. 4 - 2 2 of 4 www.diodes.com January 2011 © Diodes Incorporated 2DA1774QLP 0.5 300 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.4 hFE, DC CURRENT GAIN IC/IB = 10 200 0.3 0.2 TA = 150ºC T A = 85ºC 100 0.1 T A = 25ºC TA = -55ºC 0 0.1 1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1,000 0 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 1.2 1.0 -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.8 0.8 T A = -55°C 0.6 0.6 T A = 25°C TA = 85°C 0.4 0.4 TA = 150°C 0.2 0.2 IC/IB = 10 0 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0 0.1 1,000 1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current Package Outline Dimensions A A1 D b1 E b2 e DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L2 L3 L1 2DA1774QLP Document number: DS31438 Rev. 4 - 2 3 of 4 www.diodes.com January 2011 © Diodes Incorporated 2DA1774QLP Suggested Pad Layout C X1 X G2 G1 Y Z Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com 2DA1774QLP Document number: DS31438 Rev. 4 - 2 4 of 4 www.diodes.com January 2011 © Diodes Incorporated