2DB1132Q-13

2DB1132P/Q/R PNP SURFACE MOUNT TRANSISTOR Features N EW PRODUCT • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (2DD1664) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data • • • • • • • Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) 3E C4 2C 1B TOP VIEW COLLECTOR 2,4 1 BASE 3 EMITTER Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value -40 -32 -5 -2 -1 Unit V V V A A Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA Tj, TSTG Value 1 125 -55 to +150 Unit W °C/W °C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Notes: 1. 2. 3. 4. @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) 2DB1132P 2DB1132Q 2DB1132R hFE Min -40 -32 -5 ⎯ ⎯ ⎯ 82 120 180 ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ -0.125 ⎯ ⎯ ⎯ 190 12 Max ⎯ ⎯ ⎯ -0.5 -0.5 -0.5 180 270 390 ⎯ 30 Unit V V V μA μA V ⎯ ⎯ ⎯ MHz pF Conditions IC = -50μA, IE = 0 IC = -1mA, IB = 0 IE = -50μA, IC = 0 VCB = -20V, IE = 0 VEB = -4V, IC = 0 IC = -500mA, IB = -50mA VCE = -3V, IC = -100mA fT Cob VCE = -5V, IE = 50mA f = 30MHz VCB = -10V, IE = 0, f = 1MHz No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. DS31142 Rev. 4 - 2 1 of 4 www.diodes.com 2DB1132P/Q/R © Diodes Incorporated 1.0 1.6 1.4 PD, POWER DISSIPATION (W) 0.8 1.2 0.6 1.0 0.8 0.4 0.6 0.4 0.2 0.2 0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) VCE = -3V N EW PRODUCT 0 150 500 TA = 150°C IC/IB = 10 400 TA = 85°C 300 TA = 25°C 200 TA = -55°C TA = 150°C 100 TA = 85°C TA = 25°C TA = -55°C 0 0.001 0.01 0.1 1 10 TA = -55°C TA = -55°C TA = 25°C TA = 85°C TA = 25°C TA = 85°C TA = 150°C VCE = -3V TA = 150°C IC/IB = 10 DS31142 Rev. 4 - 2 2 of 4 www.diodes.com 2DB1132P/Q/R © Diodes Incorporated 40 250 200 30 N EW PRODUCT 150 20 100 10 50 VCE = -5V f = 30MHz 0 -IE, EMITTER CURRENT Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current Ordering Information (Note 5) Device 2DB1132P-13 2DB1132Q-13 2DB1132R-13 Notes: 5. Packaging SOT89-3L SOT89-3L SOT89-3L Shipping 2500/Tape & Reel 2500/Tape & Reel 2500/Tape & Reel For packaging details, please see below or go to our website at http://www.diodes.com/ap02007.pdf. Marking Information (Top View) YWW P13x P13x = Product Type Marking Code: Where P13P = 2DB1132P P13Q = 2DB1132Q P13R = 2DB1132R YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions D1 0 20 0. R C SOT89-3L Dim A B H Min 1.40 0.45 0.37 0.35 4.40 1.50 2.40 — 3.95 0.90 Max 1.60 0.55 0.47 0.43 4.60 1.70 2.60 — 4.25 1.20 Typ 1.50 0.50 0.42 0.38 4.50 1.60 2.50 1.50 4.10 1.05 E B1 C D D1 E e B B1 8° e (4X ) L A H L D All Dimensions in mm DS31142 Rev. 4 - 2 3 of 4 www.diodes.com 2DB1132P/Q/R © Diodes Incorporated Suggested Pad Layout 1.7 N EW PRODUCT 2.7 0.4 1.9 1.3 0.9 3.0 Unit: mm IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31142 Rev. 4 - 2 4 of 4 www.diodes.com 2DB1132P/Q/R © Diodes Incorporated