2DB1689

2DB1689 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideal for Low Power Amplification and Switching Complementary NPN Type Available (2DD2652) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green Device" (Note 2) Mechanical Data • • • • • • • • Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) C NEW PRODUCT B Top View E Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -15 -12 -6 -1.5 -3 Unit V V V A A Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 300 417 500 250 -55 to +150 Unit mW °C/W mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) hFE Cobo fT Min -15 -12 -6 ⎯ ⎯ ⎯ 270 ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ -110 ⎯ 8.5 300 Max ⎯ ⎯ ⎯ -0.1 -0.1 -200 680 ⎯ ⎯ Unit V V V μA μA mV ⎯ pF MHz Conditions IC = -10μA, IE = 0 IC = -1mA, IB = 0 IE = -10μA, IC = 0 VCB = -15V, IE = 0 VEB = -6V, IC = 0 IC = -500mA, IB = -25mA VCE = -2V, IC = -200mA VCB = -10V, IE = 0, f = 1MHz VCE = -2V, IC = -100mA, f = 100MHz Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: 1. 2. 3. 4. 5. No purposefully added lead. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2DB1689 Document number: DS31639 Rev. 2 - 2 1 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DB1689 0.6 1.2 1.0 -IC, COLLECTOR CURRENT (A) 0.5 PD, POWER DISSIPATION (W) IB = -5mA IB = -4mA 0.4 0.8 IB = -3mA NEW PRODUCT 0.3 (Note 4) 0.6 IB = -2mA 0.2 (Note 3) 0.4 IB = -1mA 0.1 0.2 0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 25 0 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 1,000 T A = 150°C TA = 85°C TA = 25°C VCE = -2V 1 T A = -55°C -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 hFE, DC CURRENT GAIN TA = 150°C 100 0.1 T A = 85°C TA = 25°C TA = -55°C 10 0.1 0.01 0.1 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 VCE = -2V IC /IB = 20 1.0 1.0 0.8 TA = -55°C 0.8 T A = -55°C 0.6 TA = 25°C 0.6 T A = 25°C 0.4 T A = 85°C 0.4 TA = 85°C 0.2 T A = 150°C 0.2 0 0.1 TA = 150°C 0 0.1 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 2DB1689 Document number: DS31639 Rev. 2 - 2 2 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DB1689 100 f = 1MHz Cibo NEW PRODUCT CAPACITANCE (pF) 10 Cobo 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics Ordering Information Part Number 2DB1689-7 Notes: (Note 6) Case SOT-323 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information RP2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) RP2 Date Code Key Year Code Month Code 2008 V Jan 1 Feb 2 2009 W Mar 3 2010 X Apr 4 May 5 YM 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O Nov N 2015 C Dec D Package Outline Dimensions A BC G H K M J D L SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm 2DB1689 Document number: DS31639 Rev. 2 - 2 3 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DB1689 Suggested Pad Layout Y Z NEW PRODUCT C Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2DB1689 Document number: DS31639 Rev. 2 - 2 4 of 4 www.diodes.com December 2008 © Diodes Incorporated