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2DD1621T

2DD1621T

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    2DD1621T - NPN SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
2DD1621T 数据手册
2DD1621T NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features N EW PRODUCT • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data • • • • • • • Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC 3E C4 2C 1B COLLECTOR 2,4 1 BASE TOP VIEW 3 EMITTER Schematic and Pin Configuration Maximum Ratings Value 30 25 6.0 2.0 Unit V V V A Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1 125 -55 to +150 Unit W °C/W °C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Turn On Time Storage Time Fall Time Notes: 1. 2. 3. 4. @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) VBE(SAT) fT Cobo ton tstg tf Min 30 25 6.0 ⎯ ⎯ 200 65 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.12 0.9 300 16 70 170 25 Max ⎯ ⎯ ⎯ 100 100 400 ⎯ 0.4 1.2 ⎯ ⎯ ⎯ ⎯ ⎯ Unit V V V nA nA ⎯ V V MHz pF ns ns ns Test Conditions IC = 10μA, IE = 0 IC = 1mA, IB = 0 IC = 10μA, IC = 0 VCB = 20V, IE = 0 VEB = 4.0V, IC = 0 VCE = 2.0V, IC = 0.1A VCE = 2.0V, IC = 1.5A IC = 1.5A, IB = 75mA IC = 1.5A, IB = 75mA VCE = 10V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VCE = 12V, VBE = 5V, IB1 = IB2 = 25mA, IC = 500mA No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. DS31240 Rev. 2 - 2 1 of 4 www.diodes.com 2DD1621T © Diodes Incorporated 1.0 3.0 2.5 PD, POWER DISSIPATION (W) 0.8 N EW PRODUCT 2.0 0.6 1.5 0.4 1.0 0.2 RθJA = 125°C/W 0.5 0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 150 0 600 0.3 IC/IB = 20 500 TA = 150°C VCE = 2V 0.25 400 T A = 85°C 0.2 300 TA = 25°C 0.15 TA = 150°C TA = 85°C 200 0.1 100 TA = -55°C 0.05 TA = 25°C T A = -55°C 0 0.001 0.01 0.1 1 10 0 0.001 0.01 0.1 1 10 VCE = 2V TA = -55°C T A = -55°C T A = 25°C TA = 85°C TA = 25°C TA = 85°C TA = 150°C IC/IB = 20 TA = 150°C 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 DS31240 Rev. 2 - 2 2 of 4 www.diodes.com 2DD1621T © Diodes Incorporated 400 300 N EW PRODUCT Cibo 200 100 Cobo VCE = 10V f = 100MHz 0 0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current Ordering Information (Note 5) Device 2DD1621T-13 Notes: 5. Packaging SOT89-3L Shipping 2500/Tape & Reel For packaging details, go to our website at http://www.diodes.com/ap02007.pdf. Marking Information (Top View) YWW N22T N22T = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions D1 0 20 0. R C SOT89-3L Dim A B Min 1.40 0.45 0.37 0.35 4.40 1.50 2.40 — 3.95 0.90 Max 1.60 0.55 0.47 0.43 4.60 1.70 2.60 — 4.25 1.20 Typ 1.50 0.50 0.42 0.38 4.50 1.60 2.50 1.50 4.10 1.05 E H B1 C D D1 E e B B1 8° e (4X ) L A H L D All Dimensions in mm DS31240 Rev. 2 - 2 3 of 4 www.diodes.com 2DD1621T © Diodes Incorporated Suggested Pad Layout 1.7 N EW PRODUCT 2.7 0.4 1.9 1.3 0.9 3.0 Unit: mm IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31240 Rev. 2 - 2 4 of 4 www.diodes.com 2DD1621T © Diodes Incorporated
2DD1621T
### 物料型号 - 型号:DD1621T

### 器件简介 - 类型:NPN表面贴装晶体管 - 特点: - 外延平面芯片结构,适合自动化装配过程 - 适用于中等功率开关或放大应用 - 无铅设计/符合RoHS标准(注1) - “绿色”设备(注2)

### 引脚分配 - SOT89-3L封装: - 3:集电极 - 2:发射极 - 4:基极

### 参数特性 - 最大额定值(@TA=25°C): - 集-基电压(VCBO):30V - 集-射电压(VCEO):25V - 射-基电压(VEBO):6.0V - 集电极电流(Ic):2.0A

- 热特性: - 功耗(Po):(值未提供) - 热阻,结到环境空气(RNJA):125°C/W - 工作和存储温度范围(TJ, TSTG):-55到+150°C

### 功能详解 - 电气特性(@TA=25°C): - 关断特性: - 集-基击穿电压(V(BRCBO)):30V - 集-射击穿电压(V(BR)CEO):25V - 射-基击穿电压(V(BR)EBO):6.0V - 集-基截止电流(ICBO):100nA - 射-基截止电流(IEBO):100nA - 开启特性: - DC电流增益(hFE):65至400 - 集-射饱和电压(VCE(SAT)):0.12至0.4V - 基-射饱和电压(VBE(SAT)):0.9至1.2V - 小信号特性: - 电流增益-带宽积(fT):300MHz - 输出电容(Cobo):16pF - 开关特性: - 导通时间(ton):70ns - 存储时间(tstg):170ns - 下降时间(tf):25ns

### 应用信息 - 该晶体管适用于中等功率开关或放大应用。

### 封装信息 - 封装类型:SOT89-3L - 封装材料:模塑料,“绿色”模塑化合物,UL阻燃等级94V-0 - 终端:镀层 - 铜引线框架上的无铅镀锡。根据MIL-STD-202方法208可焊。 - 标记信息:见第3页 - 订购信息:见第3页
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