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2DD1664P

2DD1664P

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    2DD1664P - NPN SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
2DD1664P 数据手册
2DD1664P/Q/R NPN SURFACE MOUNT TRANSISTOR Features N EW PRODUCT • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (2DB1132) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data • • • • • • • Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value 40 32 5 2 1 Unit V V V A A 3E C4 2C 1B TOP VIEW COLLECTOR 2,4 1 BASE 3 EMITTER Schematic and Pin Configuration Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Characteristic Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA Tj, TSTG Value 1 125 -55 to +150 Unit W °C/W °C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Notes: @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) 2DD1664P 2DD1664Q 2DD1664R hFE Min 40 32 5 ⎯ ⎯ ⎯ 82 120 180 ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ 0.12 ⎯ ⎯ ⎯ 280 10 Max ⎯ ⎯ ⎯ 0.5 0.5 0.4 180 270 390 ⎯ ⎯ Unit V V V μA μA V ⎯ ⎯ ⎯ MHz pF Conditions IC = 50μA, IE = 0 IC = 1mA, IB = 0 IE = 50μA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC = 500mA, IB = 50mA VCE = 3V, IC = 100mA fT Cob VCE = 5V, IE = -50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. DS31143 Rev. 4 - 2 1 of 4 www.diodes.com 2DD1664P/Q/R © Diodes Incorporated 1.0 1.8 1.6 PD, POWER DISSIPATION (W) 0.8 1.4 1.2 N EW PRODUCT 0.6 1.0 0.4 0.8 0.6 0.2 0.4 0.2 0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 150 0 400 TA = 150°C VCE = 3V IC/IB = 10 300 TA = 85°C 200 TA = 25°C TA = 150°C 100 TA = -55°C TA = 85°C T A = 25°C TA = -55°C 0 0.001 0.01 0.1 1 10 TA = -55°C TA = -55°C TA = 25°C TA = 85°C VCE = 3V TA = 25°C TA = 85°C TA = 150°C IC/IB = 10 T A = 150°C DS31143 Rev. 4 - 2 2 of 4 www.diodes.com 2DD1664P/Q/R © Diodes Incorporated 40 30 N EW PRODUCT 20 10 VCE = 5V f = 100MHz 0 -IE, EMITTER CURRENT Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current Ordering Information (Note 5) Device 2DD1664P-13 2DD1664Q-13 2DD1664R-13 Notes: 5. Packaging SOT89-3L SOT89-3L SOT89-3L Shipping 2500/Tape & Reel 2500/Tape & Reel 2500/Tape & Reel For packaging details, go to our website at http://www.diodes.com/ap02007.pdf. Marking Information (Top View) YWW N13x N13x = Product Type Marking Code: Where N13P = 2DD1664P N13Q = 2DD1664Q N13R = 2DD1664R YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions D1 0 20 0. R C SOT89-3L Dim A B H Min 1.40 0.45 0.37 0.35 4.40 1.50 2.40 — 3.95 0.90 Max 1.60 0.55 0.47 0.43 4.60 1.70 2.60 — 4.25 1.20 Typ 1.50 0.50 0.42 0.38 4.50 1.60 2.50 1.50 4.10 1.05 E B1 C D D1 E e B B1 8° e (4X ) L A H L D All Dimensions in mm DS31143 Rev. 4 - 2 3 of 4 www.diodes.com 2DD1664P/Q/R © Diodes Incorporated Suggested Pad Layout 1.7 N EW PRODUCT 2.7 0.4 1.9 1.3 0.9 3.0 Unit: mm IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31143 Rev. 4 - 2 4 of 4 www.diodes.com 2DD1664P/Q/R © Diodes Incorporated
2DD1664P
物料型号:TI 公司的 LM358P

器件简介:LM358P 是一款双运放集成电路,具有 8 引脚的 SOIC 封装和 8 引脚的 DIP 封装,广泛应用于模拟信号处理。


引脚分配:1-输出,2-反向输入,3-正向输入,4-地,5-供电,6-供电,7-反向输入,8-正向输入

参数特性:供电电压范围 ±3V 至 ±32V,单位增益带宽 1MHz,压摆率 0.3V/μs,输入偏置电流 20nA,输入失调电压 2mV。


功能详解:LM358P 支持差分放大和单端放大,具有高输入阻抗和低输出阻抗,适合作为信号调理、放大和滤波。


应用信息:适用于音频放大、传感器信号调理、仪器放大等多种模拟电路设计。


封装信息:提供 8 引脚的 SOIC 封装和 8 引脚的 DIP 封装。
2DD1664P 价格&库存

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