2DD2661
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Features
• • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type Available (2DB1697) Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
• • • • • • • Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate)
NEW PRODUCT
COLLECTOR 2,4
3E C4 2C 1B TOP VIEW
Pin Out Configuration
1 BASE 3 EMITTER
Top View Device Schematic
Maximum Ratings
@TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value 15 12 6 4 2 Unit V V V A A
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 0.9 139 2 62.5 -55 to +150 Unit W °C/W W °C/W °C
Electrical Characteristics
@TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) hFE Cobo fT Min 15 12 6 ⎯ ⎯ ⎯ 270 ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 26 170 Max ⎯ ⎯ ⎯ 0.1 0.1 180 680 ⎯ ⎯ Unit V V V μA μA mV ⎯ pF MHz Conditions IC = 10μA, IE = 0 IC = 1mA, IB = 0 IE = 10μA, IC = 0 VCB = 15V, IE = 0 VEB = 6V, IC = 0 IC = 1A, IB = 50mA VCE = 2V, IC = 200mA VCB = 10V, IE = 0, f = 1MHz VCE = 2V, IC = 100mA, f = 100MHz
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product
Notes: 1. 2. 3. 4. 5.
No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DD2661
Document number: DS31635 Rev. 2 - 2
1 of 4 www.diodes.com
December 2008
© Diodes Incorporated
2DD2661
2.0
2.5
PD, POWER DISSIPATION (W)
IC, COLLECTOR CURRENT (A)
1.6
2.0
IB = 5mA
1.2
1.5
IB = 4mA
IB = 3mA
0.8
1.0
IB = 2mA
NEW PRODUCT
0.4
0.5
IB = 1mA
0 0 25 50 150 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature
0 0 4 8 12 16 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
1,000
TA = 150°C TA = 85°C
1
IC/IB = 20
hFE, DC CURRENT GAIN
TA = 25°C TA = -55°C
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.1
T A = 150°C T A = 85°C TA = 25°C TA = -55°C
100
0.01
VCE = 2V
10 1
0.001 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current
10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
VCE = 2V
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
IC/IB = 20
1.0
1.0
0.8
TA = -55°C
0.8
T A = -55°C
0.6
TA = 25°C
0.6
T A = 25°C
0.4
T A = 85°C
TA = 85°C
0.2
TA = 150°C
0.4
T A = 150°C
0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current
0.2 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current
2DD2661
Document number: DS31635 Rev. 2 - 2
2 of 4 www.diodes.com
December 2008
© Diodes Incorporated
2DD2661
1,000
1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz)
f = 1MHz
CAPACITANCE (pF)
100
100
Cibo
10
NEW PRODUCT
Cobo
VCE = 2V f = 100MHz
10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics
1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
Ordering Information
Part Number 2DD2661-13
Notes:
(Note 6) Case SOT89-3L Packaging 2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
2661 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52
YWW 2661
Package Outline Dimensions
D1
R0 .2 00
C
E
H
B B1
8° (4 X )
L e
A
SOT89-3L Dim Min Max Typ A 1.40 1.60 1.50 B 0.45 0.55 0.50 B1 0.37 0.47 0.42 C 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.50 1.70 1.60 E 2.40 2.60 2.50 e — — 1.50 H 3.95 4.25 4.10 L 0.90 1.20 1.05 All Dimensions in mm
D
2DD2661
Document number: DS31635 Rev. 2 - 2
3 of 4 www.diodes.com
December 2008
© Diodes Incorporated
2DD2661 Suggested Pad Layout
X1
Y1 X3 Y3
X2 Y2
NEW PRODUCT
Dimensions Value (in mm) X1 1.7 X2 0.9 X3 0.4 Y1 2.7 Y2 1.3 Y3 1.9 C 3.0
C
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
2DD2661
Document number: DS31635 Rev. 2 - 2
4 of 4 www.diodes.com
December 2008
© Diodes Incorporated
