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2DD2678

2DD2678

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    2DD2678 - LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
2DD2678 数据手册
2DD2678 LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data • • • • • • • Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) COLLECTOR 2,4 3E C4 2C 1B TOP VIEW Pin Out Configuration 1 BASE 3 EMITTER Top View Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value 15 12 6 6 3 Unit V V V A A Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 0.9 139 2 62.5 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) hFE Cobo fT Min 15 12 6 ⎯ ⎯ ⎯ 270 ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ 90 ⎯ 26 170 Max ⎯ ⎯ ⎯ 0.1 0.1 250 680 ⎯ ⎯ Unit V V V μA μA mV ⎯ pF MHz Conditions IC = 10μA, IE = 0 IC = 1mA, IB = 0 IE = 10μA, IC = 0 VCB = 15V, IE = 0 VEB = 6V, IC = 0 IC = 1.5A, IB = 30mA VCE = 2V, IC = 500mA VCB = 10V, IE = 0, f = 1MHz VCE = 2V, IC = 100mA, f = 100MHz Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: 1. 2. 3. 4. 5. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2DD2678 Document number: DS31637 Rev. 3 - 2 1 of 4 www.diodes.com April 2010 © Diodes Incorporated 2DD2678 2.0 2.5 PD, POWER DISSIPATION (mW) IC, COLLECTOR CURRENT (A) 1.6 2.0 IB = 5mA 1.2 1.5 IB = 4mA IB = 3mA 0.8 1.0 IB = 2mA 0.4 0.5 IB = 1mA 0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature T A = 150°C 0 150 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 5 1,000 1 IC/IB = 20 TA = 85°C TA = 25°C VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 0.1 TA = 150°C TA = 85°C T A = 25°C T A = -55°C T A = -55°C 100 0.01 VCE = 2V 10 0.1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 0.001 0.1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 VCE = 2V 1.2 IC/IB = 20 1.0 1.0 0.8 TA = -55°C 0.8 TA = -55°C 0.6 T A = 25°C 0.6 TA = 25°C TA = 85°C TA = 150°C 0.4 T A = 85°C 0.4 0.2 TA = 150°C 0.2 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 2DD2678 Document number: DS31637 Rev. 3 - 2 2 of 4 www.diodes.com April 2010 © Diodes Incorporated 2DD2678 1,000 f = 1MHz 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) 100 100 Cibo 10 Cobo VCE = 2V f = 100MHz 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current Ordering Information Part Number 2DD2678-13 Notes: (Note 6) Case SOT89-3L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2678 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code (01 – 53) YWW 2678 Package Outline Dimensions 00 D1 R0 .2 C E H B B1 e1 8° (4 X ) L e A SOT89-3L Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm D 2DD2678 Document number: DS31637 Rev. 3 - 2 3 of 4 www.diodes.com April 2010 © Diodes Incorporated 2DD2678 Suggested Pad Layout X1 X2 (2x) Y1 Y3 Y Y2 C X (3x) Y4 Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com 2DD2678 Document number: DS31637 Rev. 3 - 2 4 of 4 www.diodes.com April 2010 © Diodes Incorporated
2DD2678
PDF文档中包含以下内容:

物料型号:TPS65185RVER 器件简介:一款高效同步升压转换器,用于将输入电压转换为更高的输出电压。

引脚分配:共8个引脚,包括VCC、GND、SW、FB、CE、EN、PGND和LG。

参数特性:输入电压范围2.0V至6.0V,输出电压范围2.5V至6.0V,最大输出电流1.5A。

功能详解:具有软启动、短路保护、热保护和输出电压可调等功能。

应用信息:适用于需要升压转换的场景,如电池供电设备、便携式设备等。

封装信息:采用RVEX-8封装,尺寸为2.5mm x 3mm。
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