2DD2679-13

2DD2679 LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type (2DB1714) Available Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data • • • • • • • Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) NEW PRODUCT COLLECTOR 2,4 3E C4 2C 1B TOP VIEW Pin Out Configuration 1 BASE 3 EMITTER Top View Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value 30 30 6 4 2 Unit V V V A A Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 0.9 139 2 62.5 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) hFE Cobo fT Min 30 30 6 ⎯ ⎯ ⎯ 270 ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ 80 ⎯ 11 240 Max ⎯ ⎯ ⎯ 0.1 0.1 370 680 ⎯ ⎯ Unit V V V μA μA mV ⎯ pF MHz Conditions IC = 10μA, IE = 0 IC = 1mA, IB = 0 IE = 10μA, IC = 0 VCB = 30V, IE = 0 VEB = 6V, IC = 0 IC = 1.5A, IB = 75mA VCE = 2V, IC = 200mA VCB = 10V, IE = 0, f = 1MHz VCE = 2V, IC = 100mA, f = 100MHz Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: 1. 2. 3. 4. 5. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 Copper pad layout. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2DD2679 Document number: DS31629 Rev. 2 - 2 1 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DD2679 2.0 10 PD, POWER DISSIPATION (mW) IC, COLLECTOR CURRENT (A) 1.6 Pw = 10ms 1 Pw = 100ms 1.2 0.1 DC 0.8 NEW PRODUCT 0.01 0.4 0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 150 0.001 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) T A = 150°C 2.0 1.8 IC, COLLECTOR CURRENT (A) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage IB = 1mA IB = 3mA IB = 5mA IB = 4mA 1,000 hFE, DC CURRENT GAIN T A = 25°C TA = 85°C T A = -55°C 100 IB = 2mA VCE = 2V 10 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 1.2 VCE = 2V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.0 IC/IB = 20 0.8 TA = -55°C TA = 150°C 0.1 T A = 85°C TA = 25°C TA = -55°C 0.6 TA = 25°C 0.4 T A = 85°C 0.2 TA = 150°C 0.01 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current 2DD2679 Document number: DS31629 Rev. 2 - 2 2 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DD2679 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 IC/IB = 20 1,000 f = 1MHz 1.0 CAPACITANCE (pF) 0.8 TA = -55°C 100 Cibo 0.6 T A = 25°C 0.4 T A = 85°C 10 Cobo NEW PRODUCT 0.2 0 1 TA = 150°C 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) 100 10 VCE = 2V f = 100MHz 1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Gain-Bandwidth Product vs. Collector Current 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.9 RθJA (t) = r(t) * RθJA RθJA = 133°C/W P(pk) D = 0.02 0.01 D = 0.01 D = 0.005 t1 D = Single Pulse t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response 10 100 1,000 2DD2679 Document number: DS31629 Rev. 2 - 2 3 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DD2679 Ordering Information Part Number 2DD2679-13 Notes: (Note 6) Case SOT89-3L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YWW 2679 2679 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 NEW PRODUCT Package Outline Dimensions D1 R0 .2 00 C E H B B1 8° (4 X ) L e A SOT89-3L Dim Min Max Typ A 1.40 1.60 1.50 B 0.45 0.55 0.50 B1 0.37 0.47 0.42 C 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.50 1.70 1.60 E 2.40 2.60 2.50 e — — 1.50 H 3.95 4.25 4.10 L 0.90 1.20 1.05 All Dimensions in mm D Suggested Pad Layout X1 Y1 X3 Y3 X2 Y2 Dimensions Value (in mm) X1 1.7 X2 0.9 X3 0.4 Y1 2.7 Y2 1.3 Y3 1.9 C 3.0 C IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2DD2679 Document number: DS31629 Rev. 2 - 2 4 of 4 www.diodes.com December 2008 © Diodes Incorporated