2N7002

2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 A D TOP VIEW B S C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data · · · · · Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K72, K7A Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Pd RqJA Tj, TSTG Value 60 60 ±20 ±40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/°C °C/W °C Characteristic Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Derating above TA = 25°C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Short duration test pulse used to minimize self-heating effect. DS11303 Rev. K-2 1 of 3 2N7002 Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25°C unless otherwise specified Symbol BVDSS @ TC = 25°C @ TC = 125°C IDSS IGSS VGS(th) @ Tj = 25°C @ Tj = 125°C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 ¾ ¾ 1.0 ¾ 0.5 80 ¾ ¾ ¾ ¾ ¾ Typ 70 ¾ ¾ ¾ 3.2 4.4 1.0 ¾ 22 11 2.0 7.0 11 Max ¾ 1.0 500 ±10 2.5 7.5 13.5 ¾ ¾ 50 25 5.0 20 20 Unit V µA nA V W A mS pF pF pF ns ns Test Condition VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VDS = 25V, VGS = 0V f = 1.0MHz VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Short duration test pulse used to minimize self-heating effect. DS11303 Rev. K-2 2 of 3 2N7002 1.0 DRAIN-SOURCE ON-RESISTANCE (W) 0.8 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED 0.6 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 Tj = 25°C 6 5 VGS = 5.0V 5.5V 4 3 2 1 0 5.0V 0.4 VGS = 10V 0.2 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 3.0 6 DRAIN-SOURCE ON-RESISTANCE (W) DRAIN-SOURCE ON-RESISTANCE (W) 5 4 ID = 50mA RDS(ON), NORMALIZED 2.5 RDS(ON), STATIC ID = 500mA 2.0 3 2 1.5 VGS = 10V, ID = 200mA 1 0 1.0 -55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs Junction Temperature 10 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage VGS, GATE SOURCE CURRENT (V) 9 8 7 6 5 4 3 2 1 0 0 VDS = 10V TA = +125°C TA = +75°C TA = -55°C TA = +25°C 0.2 0.4 0.6 0.8 1 DS11303 Rev. K-2 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics 3 of 3 2N7002