2N7002DW

2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 3 and 4) Mechanical Data • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) SOT-363 D2 G1 S1 S2 G2 D1 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Value 60 60 ±20 ±40 115 73 800 Units V V V mA Thermal Characteristics @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 200 1.60 625 -55 to +150 Units mW mW/°C °C/W °C Characteristic Total Power Dissipation Derating above TA = 25°C (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 2N7002DW Document number: DS30120 Rev. 12 - 2 1 of 4 www.diodes.com August 2010 © Diodes Incorporated 2N7002DW Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: Symbol BVDSS @ TC = 25°C @ TC = 125°C IDSS IGSS VGS(th) @ TJ = 25°C @ TJ = 125°C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 ⎯ ⎯ 1.0 ⎯ 0.5 80 ⎯ ⎯ ⎯ ⎯ ⎯ Typ 70 ⎯ ⎯ ⎯ 3.2 4.4 1.0 ⎯ 22 11 2.0 7.0 11 Max ⎯ 1.0 500 ±10 2.0 7.5 13.5 ⎯ ⎯ 50 25 5.0 20 20 Unit V µA nA V Ω A mS pF pF pF ns ns Test Condition VGS = 0V, ID = 10μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS = 10V, ID = 0.2A VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω 5. Short duration pulse test used to minimize self-heating effect. 1.0 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 7 6 5 4 3 2 1 0 0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 5 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 0.2 1.0 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs. Junction Temperature 5 1.5 4 1.0 3 2 0.5 1 0 -55 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 2N7002DW Document number: DS30120 Rev. 12 - 2 2 of 4 www.diodes.com August 2010 © Diodes Incorporated 2N7002DW Ordering Information (Note 6) Part Number 2N7002DW-7-F Notes: Case SOT-363 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K72 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) K72 YM Date Code Key Year 1998 Code J Month Code Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 4 YM K72 2002 N Apr 2003 P 5 M L 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D May Package Outline Dimensions A BC H K J D F SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout C2 C2 Z G C1 Y X Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 2N7002DW Document number: DS30120 Rev. 12 - 2 3 of 4 www.diodes.com August 2010 © Diodes Incorporated 2N7002DW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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