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2N7002K-7

2N7002K-7

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    2N7002K-7 - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
2N7002K-7 数据手册
2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • • SOT-23 NEW PRODUCT Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) Drain D Gate ESD protected up to 2kV TOP VIEW G Gate Protection Diode S TOP VIEW Source EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Value 60 ±20 300 800 Units V V mA Thermal Characteristics @TA = 25°C unless otherwise specified Symbol Pd RθJA Tj, TSTG Value 350 357 -65 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Note: 1. 2. 3. 4. 5. @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| Ciss Coss Crss Min 60 ⎯ ⎯ 1.0 ⎯ 80 ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ 1.0 ±10 2.5 2.0 3.0 ⎯ 50 25 5.0 Unit V μA μA V Ω ms pF pF pF Test Condition VGS = 0V, ID = 10μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VDS =10V, ID = 0.2A VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. 2N7002K Document number: DS30896 Rev. 3 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated 2N7002K ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 N EW PRODUCT 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 10 1.5 1 1 0.5 75 100 125 150 -25 0 25 50 Tch , CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 10 0 -50 0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 0 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 2N7002K Document number: DS30896 Rev. 3 - 2 2 of 4 www.diodes.com November 2007 © Diodes Incorporated 2N7002K N EW PRODUCT 0 TCH, CHANNEL TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 IDR, REVERSE DRAIN CURRENT (A) IDR, REVERSE DRAIN CURRENT (A) 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current Ordering Information Part Number 2N7002K-7 Notes: (Note 6) Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K7K = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September K7K Date Code Key Year Code Month Code 2006 T Jan 1 Feb 2 2007 U Mar 3 Apr 4 YM 2008 V May 5 Jun 6 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D 2N7002K Document number: DS30896 Rev. 3 - 2 3 of 4 www.diodes.com November 2007 © Diodes Incorporated 2N7002K Package Outline Dimensions A TOP VIEW BC G H K M J D F L SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0° 8° α All Dimensions in mm N EW PRODUCT Suggested Pad Layout Y Z G C Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2N7002K Document number: DS30896 Rev. 3 - 2 4 of 4 www.diodes.com November 2007 © Diodes Incorporated
2N7002K-7 价格&库存

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2N7002K-7
  •  国内价格
  • 10+0.10725
  • 50+0.09945
  • 200+0.09295
  • 600+0.08645
  • 1500+0.08125
  • 3000+0.078

库存:12210