74AHCT1G126

74AHCT1G126

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    74AHCT1G126 - SINGLE BUFFER GATE WITH 3-STATE OUTPUT - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
74AHCT1G126 数据手册
74AHCT1G126 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Description The 74AHCT1G126 is a single non-inverting buffer/bus driver with a 3-state output. The output enters a high impedance state when a LOW-level is applied to the output enable (OE) pin. The device is designed for operation with a power Pin Assignments (Top View) OE 1 A2 GND 3 4 SOT25 / SOT353 Y 5 Vcc supply range of 4.5V to 5.5V. N EW PRODUCT Features • • • • • Supply Voltage Range from 4.5V to 5.5V ± 8 mA Output Drive at 5.0V CMOS low power consumption Schmitt Trigger Action at All Inputs Make the Circuit Tolerant for Slower Input Rise and Fall Time. ESD Protection per JESD 22 o o o • • • Exceeds 200-V Machine Model (A115-A) Exceeds 2000-V Human Body Model (A114-A) Exceeds 1000-V Charged Device Model (C101C) Applications • • General Purpose Logic Wide array of products such as: o o o o o PCs, networking, notebooks, netbooks, PDAs Computer peripherals, hard drives, CD/DVD ROM TV, DVD, DVR, set top box Phones, Personal Navigation / GPS MP3 players ,Cameras, Video Recorders Latch-Up Exceeds 100mA per JESD 78, Class II SOT25 and SOT353: Assembled with “Green” Molding Compound (no Br, Sb) Lead Free Finish / RoHS Compliant (Note 1) 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html. Notes: 74AHCT1G126 Document number: DS35187Rev. 1 - 2 1 of 9 www.diodes.com May 2011 © Diodes Incorporated 74AHCT1G126 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Pin Descriptions Pin Name OE A GND Y VCC Pin No. 1 2 3 4 5 Description Output Enable Data Input Ground Data Output Supply Voltage N EW PRODUCT Logic Diagram OE 1 A 2 4 Y Function Table Inputs OE H H L A H L X Output Y H L Z 74AHCT1G126 Document number: DS35187Rev. 1 - 2 2 of 9 www.diodes.com May 2011 © Diodes Incorporated 74AHCT1G126 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Absolute Maximum Ratings (Note 2) Symbol ESD HBM ESD CDM ESD MM VCC VI VO IIK IOK IO ICC IGND TJ TSTG Notes: Description Human Body Model ESD Protection Charged Device Model ESD Protection Machine Model ESD Protection Supply Voltage Range Input Voltage Range Voltage applied to output in high or low state Input Clamp Current VI VCC) Continuous output current (VO = 0 to VCC) Continuous current through VCC Continuous current through GND Operating Junction Temperature Storage Temperature Rating 2 1 200 -0.5 to 6.5 -0.5 to 6.5 -0.5 to VCC +0.5 -20 ±20 ±25 50 -50 -40 to 150 -65 to 150 Unit KV KV V V V V mA mA mA mA mA °C °C N EW PRODUCT 2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values. Recommended Operating Conditions (Note 3) Symbol VCC VIH VIL VI VO IOH IOL Δt/ΔV TA Notes: Parameter Operating Voltage High-level Input Voltage Low-level input voltage Input Voltage Output Voltage High-level output current Low-level output current Input transition rise or fall rate Operating free-air temperature Min 4.5 2.0 Max 5.5 0.8 Unit V V V V V mA mA ns/V ºC 0 0 5.5 VCC -8 8 20 -40 125 3. Unused inputs should be held at VCC or Ground. 74AHCT1G126 Document number: DS35187Rev. 1 - 2 3 of 9 www.diodes.com May 2011 © Diodes Incorporated 74AHCT1G126 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Electrical Characteristics Symbol VOH VOL II Parameter Test Conditions VCC 4.5V 4.5V 4.5V 4.5V 0 to 5.5V 5.5V 25ºC Typ. 4.5 -40ºC to 85ºC Min Max 4.4 3.8 0 0.1 0.36 ± 0.1 0.25 0.1 0.44 ±1 2.5 -40ºC to 125ºC Min Max 4.4 3.70 0.1 0.55 ±2 10 Unit V V μA μA μA pF IOH = -50μA High Level Output Voltage IOH = -8mA IOL = 50μA Low Level Output Voltage IOL = 8mA Input Current Z State Leakage Current Supply Current VI = 5.5V or GND VO =0 to 5.5V Min 4.4 3.94 Max N EW PRODUCT IOZ ICC Ci ΔICC θJA θJC Note: VI = 5.5V or GND IO=0 VI = VCC – or Input Capacitance GND One input at 3.4 Additional V Other inputs at Supply Current VCC or GND Thermal SOT25 Resistance Junction-toSOT353 Ambient Thermal SOT25 Resistance Junction-toSOT353 Case 5.5V 5.5V 2.0 1 10 10 10 40 10 5.5V 204 (Note 4) 371 52 (Note 4) 143 1.35 1.5 mA o C/W o C/W 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 74AHCT1G126 Document number: DS35187Rev. 1 - 2 4 of 9 www.diodes.com May 2011 © Diodes Incorporated 74AHCT1G126 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Switching Characteristics VCC = 5V ± 0.5V (see Figure 1) Parameter tpd ten From (Input) A OE OE TO (OUTPUT) Y Y Y CL=15pF CL=50pF CL=15pF CL=50pF CL=15pF CL=50pF Min 0.6 0.6 0.6 0.6 0.6 0.6 25ºC Typ. 3.4 4.7 3.6 5.4 4.3 6.1 Max 5.5 7.5 5.6 8.0 6.8 8.8 -40ºC to 85ºC Min Max 0.6 0.6 0.6 0.6 0.6 0.6 6.5 8.5 6.3 9.0 8.0 10.0 -40ºC to 125ºC Min Max 0.6 0.6 0.6 0.6 0.6 0.6 7.0 9.5 6.5 9.0 8.5 11.0 Unit ns ns ns ns ns ns N EW PRODUCT tdis Operating Characteristics TA = 25 ºC Parameter Cpd Power dissipation capacitance Test Conditions f = 1 MHz No Load VCC = 5 V Typ. 11 Unit pF 74AHCT1G126 Document number: DS35187Rev. 1 - 2 5 of 9 www.diodes.com May 2011 © Diodes Incorporated 74AHCT1G126 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Parameter Measurement Information RL=1 kΩ S1 Under Test Vcc Open GND TEST tPLH/tPHL tPLZ/tPZL tPHZ/tPZH S1 Open Vload GND CL (see Note A) N EW PRODUCT Vcc 5V±0.5V 5V±0.5V Inputs VI VCC VCC tr/tf ≤3ns ≤3ns VM VCC/2 VCC/2 CL 15pF 50pF V∆ 0.3V 0.3V Voltage Waveform Pulse Duration Voltage Waveform Enable and Disable Times Low and High Level Enabling Voltage Waveform Propagation Delay Times Inverting and Non Inverting Outputs Figure 1. Load Circuit and Voltage Waveforms Notes: A. Includes test lead and test apparatus capacitance. B. All pulses are supplied at pulse repetition rate ≤ 1 MHz. C. Inputs are measured separately one transition per measurement. D. tPLZ and tPHZ are the same as tdis. E. tPZL and tPZH are the same as tEN. F. tPLH and tPHL are the same as tPD. 74AHCT1G126 Document number: DS35187Rev. 1 - 2 6 of 9 www.diodes.com May 2011 © Diodes Incorporated 74AHCT1G126 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Ordering Information 74 AHCT 1G 126 XX - 7 N EW PRODUCT Function Logic Device 74 : Logic Prefix 126 : 3-State Buffer OE-High AHCT : 2 to 5.5V Family with TTL input level 1G : One gate Package Code W5 SE Packaging (Note 5) SOT25 SOT353 Package W5 : SOT25 SE : SOT353 Packing 7 : Tape & Reel Device 74AHCT1G126W5-7 74AHCT1G126SE-7 Notes: Quantity 7” Tape and Reel Part Number Suffix -7 -7 3000/Tape & Reel 3000/Tape & Reel 5. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Marking Information (Top View) 5 4 7 XX Y W X 1 2 3 XX : Identification code Y : Year 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal code Part Number 74AHCT1G126W5 74AHCT1G126SE Package SOT25 SOT353 Identification Code ZZ ZZ 74AHCT1G126 Document number: DS35187Rev. 1 - 2 7 of 9 www.diodes.com May 2011 © Diodes Incorporated 74AHCT1G126 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Package Outline Dimensions (All Dimensions in mm) (1) Package Type: SOT25 A SOT25 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0° 8° α ⎯ All Dimensions in mm BC N EW PRODUCT H K M N J D L (2) Package Type: SOT353 A SOT353 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm BC H K M J D F L 74AHCT1G126 Document number: DS35187Rev. 1 - 2 8 of 9 www.diodes.com May 2011 © Diodes Incorporated 74AHCT1G126 SINGLE BUFFER GATE WITH 3-STATE OUTPUT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. N EW PRODUCT Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com 74AHCT1G126 Document number: DS35187Rev. 1 - 2 9 of 9 www.diodes.com May 2011 © Diodes Incorporated
74AHCT1G126
1. 物料型号: - 型号:74AHCT1G126

2. 器件简介: - 74AHCT1G126是一款单路非反相缓冲器/总线驱动器,具有3态输出功能。当输出使能(OE)引脚接收到低电平时,输出进入高阻态。该器件设计用于4.5V至5.5V的电源电压范围。

3. 引脚分配: - OE(1):输出使能 - A(2):数据输入 - GND(3):地 - Y(4):数据输出 - VCC(5):供电电压

4. 参数特性: - 供电电压范围:4.5V至5.5V - 5.0V下±8mA的输出驱动能力 - CMOS低功耗 - 所有输入具有施密特触发器动作,使电路对较慢的输入上升和下降时间具有容忍性 - 静电放电保护:超过200V的机器模型、超过2000V的人体模型、超过1000V的带电设备模型 - 抗锁能力:超过100mA,符合JESD78,二级标准 - 无铅表面处理/符合RoHS标准

5. 功能详解: - 该器件是一个非反相缓冲器,具有3态输出功能,可以在不需要输出时将输出置为高阻态,以减少功耗和避免驱动冲突。

6. 应用信息: - 通用逻辑应用,如个人电脑、网络设备、笔记本电脑、个人数字助理(PDA)、电脑外设、硬盘、CD/DVD光驱、电视、DVD、数字录像机、机顶盒、手机、个人导航/GPS、MP3播放器、相机、录像机等。

7. 封装信息: - SOT25和SOT353两种封装类型,具体尺寸和封装细节在文档中有详细描述。
74AHCT1G126 价格&库存

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