B120-13-F

B120-13-F

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    B120-13-F - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
B120-13-F 数据手册
SPICE MODELS: B120 B130 B140 B150 B160 B120B B130B B140B B150B B160B B120/B - B160/B 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features · · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free Finish/RoHS Compliant (Note 3) B Dim A SMA Min 2.29 4.00 1.27 0.15 4.80 0.10 0.76 2.01 Max 2.92 4.60 1.63 0.31 5.59 0.20 1.52 2.62 SMB Min 3.30 4.06 1.96 0.15 5.00 0.10 0.76 2.00 Max 3.94 4.57 2.21 0.31 5.59 0.20 1.52 2.62 A C B C D E G H J Mechanical Data · · · · · · · · Case: SMA/SMB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Lead Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208 e3 Polarity: Cathode Band or Cathode Notch Marking Information: See page 3 Ordering Information: See page 3 Approximate Weight: SMA 0.064 grams SMB 0.093 grams D J H G E All Dimensions in mm No Suffix Designates SMA Package “B” Suffix Designates SMB Package Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 130°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Forward Voltage Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance (Note 2) Typical Thermal Resistance Junction to Terminal (Note 1) Operating and Storage Temperature Range Notes: @ TA = 25°C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM CT RqJT Tj, TSTG B120/B 20 14 B130/B 30 21 B140/B 40 28 1.0 30 B150/B 50 35 B160/B 60 42 Unit V V A A @ IF = 1.0A @ TA = 25°C @ TA = 100°C 0.50 0.5 10 110 20 -65 to +150 0.70 V mA pF °C/W °C 1. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7. DS13002 Rev. 13 - 2 1 of 3 www.diodes.com B120/B-B160/B ã Diodes Incorporated 10 IF, INSTANTANEOUS FWD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 1.0 TA = +125° C TA = +75° C TA = +25° C 1.0 TA = -25° C 0.5 0 25 50 75 100 125 150 0.1 0.2 0.4 0.6 0.8 1.0 1.2 TT, TERMINAL TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve IF, INSTANTANEOUS FORWARD CURRENT (A) 10 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics - B120/B thru B140/B 40 IFSM, PEAK FORWARD SURGE CURRENT (A) Single Half Sine-Wave 30 1.0 TA = +125ºC 20 TA = +25ºC 0.1 10 0.01 0 0.2 0.4 IF Pulse Width = 300 ms 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 4 Max Non-Repetitive Peak Fwd Surge Current 100 0.6 0.8 1.0 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 3 Typ. Forward Characteristics - B150/B thru B160/B 1000 Tj = 25°C f = 1 MHz 10,000 TA = +125° C CT, TOTAL CAPACITANCE (pF) 1000 TA = +75° C 100 100 10 TA = +25° C 1 0.1 TA = -25° C 10 0.1 1 10 100 0.01 0 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Fig. 5 Typical Total Capacitance VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 6 Typical Reverse Characteristics, B120/B thru B140/B DS13002 Rev. 13 - 2 2 of 3 www.diodes.com B120/B-B160/B 10,000 1000 TA = +125° C 100 10 TA = +70° C 1 TA = +25° C 0.1 0 10 20 30 40 50 60 70 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 7 Typical Reverse Characteristics, B150/B thru B160/B Ordering Information (Note 4) Device* B1XX-13-F B1XXB-13-F Notes: Packaging SMA SMB Shipping 5000/Tape & Reel 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. * xx = Device type, e.g. B120-13-F (SMA package); B120B-13-F (SMB package). Marking Information B1X0 = Product type marking code, ex: B120 (SMA package) B1X0B = Product type marking code, ex: B160B (SMB package) = Manufacturers’ code marking YWW = Date code marking Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 YWW B1X0(B) Note: Device has a cathode band (as shown above) and may also have a cathode notch (as shown on Page 1). IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS13002 Rev. 13 - 2 3 of 3 www.diodes.com B120/B-B160/B
B120-13-F
1. 物料型号: - B120/B - B160/B:这是一系列肖特基整流二极管的型号,其中B120/B至B160/B表示不同的电压等级。

2. 器件简介: - 这些器件是1.0A的表面贴装肖特基势垒整流器,具有保护瞬态的防护环结构,适合自动装配,低功耗高效率,并且具有高达30A峰值的浪涌过载额定值。适用于低电压、高频逆变器、自由轮和极性保护应用。

3. 引脚分配: - 极性:阴极带有色环或阴极凹槽。 - 引脚:无铅镀层(亚光锡表面处理),符合MIL-STD-202方法208e3的可焊性。

4. 参数特性: - 峰值重复反向电压、工作峰值反向电压、直流阻断电压等参数随型号不同而有所变化,例如B120/B的峰值重复反向电压为20V,而B160/B为60V。 - 额定电流为1.0A,适用于60Hz、单相半波、电阻性或感性负载。

5. 功能详解: - 这些器件主要用于整流应用,能够处理高频率和低电压环境,同时具有保护电路免受瞬态电压冲击的能力。

6. 应用信息: - 适用于低电压、高频逆变器、自由轮和极性保护应用。

7. 封装信息: - 封装类型为SMA/SMB,材料为注塑塑料,UL可燃性等级94V-0,湿度敏感度等级1,符合J-STD-020C标准。 - 尺寸数据详细列出了SMA和SMB两种封装的最小和最大尺寸。
B120-13-F 价格&库存

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B120-13-F
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