BAS21T-7-F

BAS21T-7-F

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BAS21T-7-F - SURFACE MOUNT FAST SWITCHING DIODE - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
BAS21T-7-F 数据手册
BAS21T SURFACE MOUNT FAST SWITCHING DIODE Please click here to visit our online spice models database. Features • • • • • • Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance Lead Free/RoHS Compliant (Note 3) "Green" Device (Notes 4 and 5) Mechanical Data • • • • • • • • • SOT-523 Case: SOT-523 Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Polarity: See Diagram Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.002 grams (approximate) TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IFM IO @ t = 1.0μs @ t = 1.0s IFSM IFRM Value 250 200 141 400 200 2.5 0.5 625 Unit V V V mA mA A mA Characteristic Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current Repetitive Peak Forward Surge Current Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance Junction to Ambient (Note 1) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 150 833 -65 to +150 Unit mW °C/W °C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage @TA = 25°C unless otherwise specified Symbol V(BR)R VF IR CT trr Min 250 ⎯ ⎯ Max ⎯ 1.0 1.25 100 15 5.0 50 Unit V V nA μA pF ns Reverse Current @ Rated DC Blocking Voltage (Note 2) Total Capacitance Reverse Recovery Time Notes: ⎯ ⎯ Test Condition IR = 100μA IF = 100mA IF = 200mA TJ = 25°C TJ = 100°C VR = 0, f = 1.0MHz IF = IR = 30mA, Irr = 0.1 x IR, RL = 100Ω 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BAS21T Document number: DS30264 Rev. 10 - 2 1 of 3 www.diodes.com March 2009 © Diodes Incorporated BAS21T IF, INSTANTANEOUS FORWARD CURRENT (A) 0 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 200 200 1 PD, POWER DISSIPATION (mW) 150 0.1 100 0.01 50 0 0.001 0 0.8 1.0 0.2 0.4 1.2 1.4 0. 6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 100 TA = 150ºC 4.0 3.5 CT, TOTAL CAPACITANCE (pF) 10 TA = 125ºC 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 TA = 75ºC 0.1 TA = 25ºC 0.01 TA = 0ºC 0.001 T A = -40ºC 0.0001 0 150 200 250 50 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics 0 10 30 40 20 VR, DC REVERSE VOLTAGE (V) Fig. 4 Total Capacitance vs. Reverse Voltage Ordering Information Part Number BAS21T-7-F Notes: (Notes 5 & 6) Case SOT-523 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information T3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) T3YM Date Code Key Year Code Month Code 2001 M Jan 1 2002 N Feb 2 2003 P Mar 3 2004 R Apr 4 2005 S May 5 2006 T Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D March 2009 BAS21T Document number: DS30264 Rev. 10 - 2 2 of 3 www.diodes.com © Diodes Incorporated BAS21T Package Outline Dimensions A BC G H K M N J D L SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BAS21T Document number: DS30264 Rev. 10 - 2 3 of 3 www.diodes.com March 2009 © Diodes Incorporated
BAS21T-7-F
1. 物料型号:BAS21T

2. 器件简介: - BAS21T是一种表面贴装快速开关二极管。 - 特点包括超小型表面贴装封装、快速开关速度。

3. 引脚分配: - 该器件为SOT-523封装,具体引脚信息和极性见图示。

4. 参数特性: - 重复峰值反向电压(VRRM):250V - 工作峰值反向电压/直流阻断电压(VR):200V - 均方根反向电压(VR(RMS)):141V - 正向连续电流(IFM):400mA - 平均整流输出电流(IO):200mA - 非重复峰值正向浪涌电流(IFSM):0.5至2.5A(1.0μs至1.0s) - 重复峰值正向浪涌电流(IFRM):625mA - 功率耗散(PD):150mW - 热阻(RθJA):833°C/W - 工作和存储温度范围(TJ, TSTG):-65至+150°C

5. 功能详解: - 该二极管适用于一般用途的开关应用,具有高导通性。 - 符合无铅/RoHS标准。 - 符合J-STD-020D标准的1级湿度敏感度。

6. 应用信息: - 推荐用于FR-4 PCB板上,具体布局可在官网下载。

7. 封装信息: - 封装类型:SOT-523 - 尺寸参数详见PDF文档中的Package Outline Dimensions部分。
BAS21T-7-F 价格&库存

很抱歉,暂时无法提供与“BAS21T-7-F”相匹配的价格&库存,您可以联系我们找货

免费人工找货