BAV170T-7

BAS116T, BAW156T, BAV170T, BAV199T SURFACE MOUNT LOW LEAKAGE DIODE Features NEW PRODUCT · · Ultra-Small Surface Mount Package Very Low Leakage Current SOT-523 A C TOP VIEW B G H K M E BC Dim A B C D G H N Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ Mechanical Data · · · · · · · · Case: SOT-523, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Marking: See Diagrams Below & Page 3 Weight: 0.002 grams (approx.) Ordering Information: See Page 3 J K L M N a J D L All Dimensions in mm BAS116T Marking: 50 BAW156T Marking: 53 BAV170T Marking: 51 BAV199T Marking: 52 Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0ms @ t = 1.0s Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Single Diode Double Diode Symbol VRRM VRWM VR VR(RMS) IFM IFRM IFSM Pd RqJA Tj , TSTG Value 85 60 215 125 500 4.0 1.0 0.5 150 833 -65 to +150 Unit V V mA mA A mW °C/W °C Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30258 Rev. 5 - 2 1 of 3 BAS116T, BAW156T, BAV170T, BAV199T Electrical Characteristics @ TA = 25°C unless otherwise specified NEW PRODUCT Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) Symbol V(BR)R VF Min 85 ¾ ¾ ¾ ¾ Typ ¾ ¾ ¾ 2 ¾ Max ¾ 0.90 1.0 1.1 1.25 5.0 80 ¾ 3.0 Unit V V nA nA pF ms Test Condition IR = 100mA IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA VR = 75V VR = 75V, Tj = 150°C VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Leakage Current (Note 2) Total Capacitance Reverse Recovery Time Notes: IR CT trr 2. Short duration test pulse used to minimize self-heating effect. 200 IF, INSTANTANEOUS FORWARD CURRENT (mA) 250 PD, POWER DISSIPATION (mW) 1000 100 150 10 100 1.0 50 0.1 0 0 25 50 75 100 125 150 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 10 VR = 75V 160 140 TA, AMBIENT TEMPERATURE (°C) 120 100 80 60 40 20 0 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 VF(AVE), AVERAGE FORWARD VOLTAGE (V) Fig. 4 Typical Forward Voltage vs Ambient Temperature IF = 10mA IF = 50mA IF = 1mA IF = 150mA IR, REVERSE CURRENT (nA) 1 0.1 0 50 100 150 200 TA, AMBIENT TEMPERATURE (° C) Fig. 3 Typical Reverse Characteristics DS30258 Rev. 5 - 2 2 of 3 BAS116T, BAW156T, BAV170T, BAV199T Ordering Information (Note 3) Packaging SOT-523 SOT-523 SOT-523 SOT-523 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel NEW PRODUCT Device BAS116T-7 BAW156T-7 BAV170T-7 BAV199T-7 Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XX = Product Type Marking Code (See Page 1, e.g. 50 = BAS116T) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) XXYM Date Code Key Year Code Month Code Jan 1 2001 M Feb 2 March 3 2002 N Apr 4 2003 P May 5 Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30258 Rev. 5 - 2 3 of 3 BAS116T, BAW156T, BAV170T, BAV199T