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BAV199_08

BAV199_08

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BAV199_08 - DUAL SURFACE MOUNT LOW LEAKAGE DIODE - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
BAV199_08 数据手册
BAV199 DUAL SURFACE MOUNT LOW LEAKAGE DIODE Please click here to visit our online spice models database. Features • • • Surface Mount Package Ideally Suited for Automated Insertion Very Low Leakage Current Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) Mechanical Data • • • • • • • • • SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Polarity: See Diagram Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.008 grams (approximate) TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) Single diode Double diode @ t = 1.0μs @ t = 1.0ms @ t = 1.0s IFM IFRM IFSM Value 85 60 160 140 500 4.0 1.0 0.5 Unit V V mA mA A Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 2) Repetitive Peak Forward Current (Note 2) Non-Repetitive Peak Forward Surge Current Thermal Characteristics Characteristic Power Dissipation (Note 2) Thermal Resistance Junction to Ambient Air (Note 2) Operating and Storage Temperature Range Symbol PD RθJA TJ , TSTG Value 250 500 -65 to +150 Unit mW °C/W °C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage @TA = 25°C unless otherwise specified Symbol V(BR)R VF Min 85 ⎯ Typ ⎯ ⎯ Max ⎯ 0.90 1.0 1.1 1.25 5.0 80 ⎯ 3.0 Unit V V nA nA pF μs Test Condition IR = 100μA IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA VR = 75V VR = 75V, TJ = 150°C VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Leakage Current (Note 1) Total Capacitance Reverse Recovery Time Notes: 1. 2. 3. 4. IR CT trr ⎯ ⎯ ⎯ ⎯ 2 ⎯ Short duration pulse test used to minimize self-heating effect. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Halogen and Antimony Free. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BAV199 Document number: DS30232 Rev. 8 - 2 1 of 3 www.diodes.com May 2008 © Diodes Incorporated BAV199 IF, INSTANTANEOUS FORWARD CURRENT (mA) 300 250 1,000 PD, POWER DISSIPATION (mW) 100 200 10 150 1.0 100 50 0.1 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve, Total Package 10 VR = 75V 0.01 2 0 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, Per Element 300 Device mounted on an FR4 printed-circuit board IR, REVERSE CURRENT (nA) 250 IF, FORWARD CURRENT (mA) 200 1 150 Single diode loaded 100 50 Double diode loaded 0.1 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Typical Reverse Characteristics, Per Element 0 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Current Derating Curve, Per Element Ordering Information Part Number BAV199-7-F Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K52 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K52 Date Code Key Year Code Month Code 2001 M Jan 1 2002 N Feb 2 2003 P Mar 3 2004 R Apr 4 YM 2005 S May 5 2006 T Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D May 2008 BAV199 Document number: DS30232 Rev. 8 - 2 2 of 3 www.diodes.com © Diodes Incorporated BAV199 Package Outline Dimensions A TOP VIEW BC G H K M J D F L SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BAV199 Document number: DS30232 Rev. 8 - 2 3 of 3 www.diodes.com May 2008 © Diodes Incorporated
BAV199_08
### 物料型号 - 型号:BAV199 - 封装:SOT-23

### 器件简介 BAV199是一款双表面贴装低漏电流二极管,适合自动化插入,具有非常低的漏电流,无铅、无卤素和锑,符合RoHS标准的“绿色”设备。

### 引脚分配 - 引脚:根据MIL-STD-202方法208,采用无铅镀层(镀锡表面退火在合金42框架上)。

### 参数特性 - 最大额定值(@Ta=25°C): - 反向击穿电压(VRRM):85V - 反向工作电压(VRWM):60V - 反向峰值电流(IFM):500mA - 非重复峰值正向浪涌电流(IFSM):4.0A/1.0A/0.5A(1.0s/1.0ms/1.0s) - 热特性: - 功率耗散(Po):250mW - 热阻(RaJA):500°C/W - 工作和存储温度范围(TJ, TSTG):-65至+150°C

### 功能详解 BAV199具有低漏电流和高反向击穿电压的特点,适用于需要低漏电流和高反向电压的应用场合。

### 应用信息 该二极管适用于一般整流应用,特别是在需要低漏电流和环保要求的应用中。

### 封装信息 - 封装类型:SOT-23 - 尺寸:详细尺寸图和建议的焊盘布局可在Diodes公司网站找到。
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