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BAV756DW-7-F

BAV756DW-7-F

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BAV756DW-7-F - QUAD SURFACE MOUNT SWITCHING DIODE ARRAY - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
BAV756DW-7-F 数据手册
BAV756DW QUAD SURFACE MOUNT SWITCHING DIODE ARRAY Please click here to visit our online spice models database. Features • • • • • • • • Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance One BAV70 Circuit and One BAW56 Circuit In One Package Easily Connected As Full Wave Bridge Lead Free/RoHS Compliant (Note 3) "Green" Device (Notes 4 and 5) Mechanical Data • • • • • • • • • SOT-363 Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Polarity: See Diagram Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.006 grams (approximate) C1 A1 C2 A1 C2 A2 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Value 100 75 53 300 150 2.0 1.0 Unit V V V mA mA A Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Notes 1 and 2) Average Rectified Output Current (Notes 1 and 2) Non-Repetitive Peak Forward Surge Current @ t = 1.0μs @ t = 1.0s Thermal Characteristics Characteristic Power Dissipation (Notes 1 and 2) Power Dissipation TS = 60°C (Note 2) Thermal Resistance Junction to Ambient Air (Notes 1 and 2) Thermal Resistance Junction to Soldering Point (Note 2) Operating and Storage Temperature Range Symbol PD PD RθJA RθJS TJ, TSTG Value 200 300 625 275 -65 to +150 Unit mW mW °C/W °C/W °C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 6) Forward Voltage @TA = 25°C unless otherwise specified Symbol V(BR)R VF Min 75 ⎯ Max ⎯ 0.715 0.855 1.0 1.25 2.5 50 30 25 2.0 4.0 Unit V V μA μA μA nA pF ns Test Condition IR = 2.5μA IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA VR = 75V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Reverse Current (Note 6) Total Capacitance Reverse Recovery Time Notes: IR CT trr ⎯ ⎯ ⎯ 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. One or more diodes loaded. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 6. Short duration pulse test used to minimize self-heating effect. BAV756DW Document number: DS30148 Rev. 9 - 2 1 of 3 www.diodes.com April 2008 © Diodes Incorporated BAV756DW IF, INSTANTANEOUS FORWARD CURRENT (A) 300 1 PD, POWER DISSIPATION (mW) 250 Note 1 200 0.1 150 100 0.01 50 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve, Total Package 0.001 0.5 1.0 1.5 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, Per Element IR, INSTANTANEOUS REVERSE CURRENT (nA) 10,000 2.0 1.8 CT, TOTAL CAPACITANCE (pF) f = 1.0MHz 1,000 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 100 10 1 0.1 0 20 40 60 80 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics, Per Element 0.0 10 30 40 20 VR, DC REVERSE VOLTAGE (V) Fig. 4 Total Capacitance vs. Reverse Voltage, Per Element 0 Ordering Information Part Number BAV756DW-7-F Notes: (Notes 5 & 7) Case SOT-363 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KCA = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September KCA Date Code Key Year Code Month Code 2001 M Jan 1 2002 N Feb 2 2003 P Mar 3 2004 R Apr 4 YM 2005 S May 5 2006 T Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2111 Y Nov N 2012 Z Dec D April 2008 BAV756DW Document number: DS30148 Rev. 9 - 2 2 of 3 www.diodes.com © Diodes Incorporated BAV756DW Package Outline Dimensions A BC H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm Suggested Pad Layout E E Dimensions Value (in mm) Z G Z G C 2.5 1.3 0.42 0.6 1.9 0.65 X Y C E Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BAV756DW Document number: DS30148 Rev. 9 - 2 3 of 3 www.diodes.com April 2008 © Diodes Incorporated
BAV756DW-7-F
### 物料型号 - 型号:BAV756DW

### 器件简介 - 描述:BAV756DW是一款四路表面贴装开关二极管阵列,具有快速开关速度和超小型表面贴装封装,适用于一般用途的开关应用。该器件包含一个BAV70电路和一个BAW56电路,可以轻松连接为全波桥。

### 引脚分配 - 极性:详见PDF文档中的图表。 - 标记信息:详见第2页。

### 参数特性 - 最大额定值: - 非重复峰值反向电压(VRM):100V - 峰值重复反向电压/工作峰值反向电压/直流阻断电压(VRRM/VRWM/VR):75V - 有效值反向电压(VRRMS):53V - 正向连续电流(IFM):300mA - 平均整流输出电流(IO):150mA - 非重复峰值正向浪涌电流(IFSM):2.0A(1.0us)/1.0A(1.0s) - 热特性: - 功率耗散(PO):200mW - 功率耗散在Ts=60°C时(PO):300mW - 结到环境空气的热阻(RaJA):625°C/W - 结到焊接点的热阻(RaJS):275°C/W - 工作和存储温度范围(TJ,TSTG):-65至+150°C

### 功能详解 - 电气特性:在25°C下,除非另有说明,包括反向击穿电压、正向电压、反向电流和总电容等参数。

### 应用信息 - 应用:适用于一般用途的开关应用,可以作为全波桥使用。

### 封装信息 - 封装:SOT-363 - 封装材料:模塑塑料,“绿色”模塑料化合物。 - UL可燃性分类等级:94V-0 - 湿度敏感度:根据J-STD-020D为1级 - 终端:根据MIL-STD-202,方法208可焊 - 无铅镀层:亚锡表面处理,覆盖在合金42引线上。
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