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BAV756DW_1

BAV756DW_1

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BAV756DW_1 - QUAD SURFACE MOUNT SWITCHING DIODE ARRAY - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
BAV756DW_1 数据手册
SPICE MODELS: BAV756DW Lead-free BAV756DW QUAD SURFACE MOUNT SWITCHING DIODE ARRAY Features · · · · · · · · · · · · · · · · Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance One BAV70 Circuit and One BAW56 Circuit In One Package Easily Connected As Full Wave Bridge Lead Free/RoHS Compliant (Note 4) G H K M BC A SOT-363 Dim A B C D F H J D F L Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° Mechanical Data Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Polarity: See Diagram Marking: KCA, See Page 2 Ordering Information: See Page 2 Weight: 0.006 grams (approximate) A1 C1 0.65 Nominal J K L M a A1 C2 C2 A2 TOP VIEW All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1 and 3) Average Rectified Output Current (Note 1 and 3) Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s Power Dissipation (Note 1 and 3) Power Dissipation TS = 60°C (Note 3) Thermal Resistance Junction to Ambient Air (Note 1 and 3) Thermal Resistance Junction to Soldering Point (Note 3) Operating and Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd Pd RqJA RqJS Tj, TSTG Value 100 75 53 300 150 2.0 1.0 200 300 625 275 -65 to +150 Unit V V V mA mA A mW mW °C/W °C/W °C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage @ TA = 25°C unless otherwise specified Symbol V(BR)R VF Min 75 ¾ Max ¾ 0.715 0.855 1.0 1.25 2.5 50 30 25 2.0 4.0 Unit V V mA mA mA nA pF ns Test Condition IR = 2.5mA IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Reverse Current (Note 2) Total Capacitance Reverse Recovery Time Notes: IR CT trr ¾ ¾ ¾ DS30148 Rev. 7 - 2 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. One or more diodes loaded. 4. No purposefully added lead. 1 of 3 www.diodes.com BAV756DW ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 1 IR, INSTANTANEOUS REVERSE CURRENT (nA) 10000 TA = 150ºC TA = 125ºC 1000 0.1 TA = 150ºC TA = 75ºC TA = 25ºC TA = 0ºC TA = -40ºC 100 TA = 75ºC 10 TA = 25ºC TA = 0ºC 0.01 1 TA = -40ºC 0.001 0 0.5 1.0 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 2.0 1.8 CT, TOTAL CAPACITANCE (pF) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 Pd, POWER DISSIPATION (mW) f = 1.0MHz 0.1 0 20 40 60 80 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 300 Note 1 250 200 150 100 50 0 0 25 50 75 100 125 150 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance vs. Reverse Voltage TA, AMBIENT TEMPERATURE (° C) Fig. 4 Power Derating Curve Ordering Information Device BAV756DW-7-F Notes: (Note 5) Packaging SOT-363 Shipping 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KCA = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September KCA Date Code Key Year Code Month Code 2001 M Jan 1 2002 N Feb 2 2003 P March 3 2004 R Apr 4 YM 2005 S May 5 2006 T Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D DS30148 Rev. 7 - 2 2 of 3 www.diodes.com BAV756DW IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30148 Rev. 7 - 2 3 of 3 www.diodes.com BAV756DW
BAV756DW_1
1. 物料型号: - 型号:BAV756DW - 制造商:DIODES

2. 器件简介: - 四路表面贴装开关二极管阵列,具有快速开关速度、超小型表面贴装封装,适用于一般用途的开关应用,高导通性,一个BAV70电路和一个BAW56电路集成在一个封装内,易于连接成全波桥,无铅/RoHS合规。

3. 引脚分配: - 封装类型:SOT-363 - 引脚极性:详见图示

4. 参数特性: - 最大额定值:非重复峰值反向电压100V,峰值重复反向电压/工作峰值反向电压/直流阻断电压75V,RMS反向电压53V,正向连续电流300mA,平均整流输出电流150mA,非重复峰值正向浪涌电流2.0A/1.0A,功率耗散200mW/300mW(Ts=60°C),结到环境空气的热阻625°C/W,结到焊接点的热阻275°C/W,工作和存储温度范围-65至+150°C。

5. 功能详解: - 电气特性:在25°C环境温度下,反向击穿电压75V,正向电压0.715V至1.25V(不同电流下),反向电流2.5uA至25nA(不同电压和温度下),总电容2.0pF,反向恢复时间4.0ns。

6. 应用信息: - 适用于一般用途的开关应用,可以作为全波桥连接使用。

7. 封装信息: - 封装类型:SOT-363 - 尺寸参数:详细尺寸参数见PDF文档中的表格。
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