BAW56W-7

BC857BS DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features · · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package A NEW PRODUCT SOT-363 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° B C D F M H 0.65 Nominal Mechanical Data K · · · · · · · Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K3W (See Page 3) Weight: 0.006 grams H J K L M a J D C2 B1 E1 F L E2 B2 C1 All Dimensions in mm TOP VIEW Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 1) @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM IBM Pd Tj, TSTG Value -50 -45 -5.0 -100 -200 -200 200 -55 to +125 Unit V V V mA mA mA mW °C Characteristic Peak Collector Current (Note 1) Peak Base Current (Note 1) Power Dissipation at TSB = 50°C (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30373 Rev. 1 - 2 1 of 3 www.diodes.com BC857BS NEW PRODUCT Electrical Characteristics Characteristic DC Current Gain (Note 2) @ TA = 25°C unless otherwise specified Symbol hFE RqJA VCE(SAT) VBE(SAT) VBE ICBO ICBO IEBO fT CCBO CEBO Min 220 — — — -580 — — 100 — — Typ — — — — -700 -665 — — — — — 11 Max 475 625 -100 -400 — -750 -15 -4.0 -100 — 3 — Unit — °C/W mV mV mV nA µA nA MHz pF pF Test Condition VCE = -5.0V, IC = -2.0mA Note 1 IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA VCE = -5.0V, IC = -2.0mA VCB = -30V, IE = 0 VCB = -30V, Tj = 150°C VEB = -5.0V, IC = 0 VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz VEB = -0.5V, f = 1.0MHz Thermal Resistance, Junction to Ambient Air (Note 1) Collector-Emitter Saturation Voltage (Note 2) Base-Emitter Saturation Voltage (Note 2) Base-Emitter Voltage (Note 2) Collector Cutoff Current Emitter Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 250 (see Note 1) 1000 TA = 150° C VCE = -5V Pd, POWER DISSIPATION (mW) 200 hFE, DC CURRENT GAIN 100 TA = 25° C TA = -50° C 150 100 10 50 0 0 100 TA, AMBIENT TEMPERATURE (° C) Fig. 1, Power Derating Curve 0.5 VCE, COLLECTOR SATURATION VOLTAGE (V) 1 200 1 10 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 100 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) IC / IB = 20 TA = 25° C 0.4 0.3 VCE = -5V 100 0.2 TA = 150° C 0.1 TA = 25° C 0 0.1 1 TA = -50° C 10 10 100 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current DS30373 Rev. 1 - 2 2 of 3 www.diodes.com BC857BS NEW PRODUCT Ordering Information Device BC857BS-7 Notes: (Note 3) Packaging SOT-363 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3W YM Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 2002 N Apr 4 2003 P May 5 K3W = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September DS30373 Rev. 1 - 2 K3W YM 2004 R Jun 6 Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D 3 of 3 www.diodes.com BC857BS