BC817

BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features · · · · · · · · · · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807) B E SOT-23 Dim A C B TOP VIEW Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.85 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.80 8° A B C Mechanical Data Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking (See Page 3): BC817-16 6A, K6A BC817-25 6B, K6B BC817-40 6C, K6C Ordering & Date Code Information: See Page 3 Approx. Weight: 0.008 grams E D G H C D E G H K J L M J K L M a All Dimensions in mm Maximum Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current @TA = 25°C unless otherwise specified Symbol VCEO VEBO IC ICM IEM Pd RqSB RqJA Tj, TSTG Value 45 5.0 800 1000 1000 310 320 403 -65 to +150 Unit V V mA mA mA mW °C/W °C/W °C Characteristic Power Dissipation at TSB = 50°C (Note 1) Thermal Resistance, Junction to Substrate Backside (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics DC Current Gain @TA = 25°C unless otherwise specified Symbol Min 100 160 250 60 100 170 — — — — 100 — Max 250 400 600 — — — 0.7 1.2 100 5.0 100 — 12 Unit Test Condition VCE = 1.0V, IC = 100mA — VCE = 1.0V, IC = 300mA Characteristic (Note 2) Current Gain Group -16 -25 -40 Current Gain Group -16 -25 -40 hFE Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Notes: VCE(SAT) VBE ICES IEBO fT CCBO V V nA µA nA MHz pF IC = 500mA, IB = 50mA VCE = 1.0V, IC = 300mA VCE = 45V VCE = 25V, Tj = 150°C VEB = 4.0V VCE = 5.0V, IC = 10mA, f = 50MHz VCB = 10V, f = 1.0MHz 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area. 2. Short duration pulse test used to minimize self-heating effect. DS11107 Rev. 9 - 2 1 of 3 BC817-16/-25/-40 400 See Note 1 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) TA = 25° C f = 20MHz Pd, POWER DISSIPATION (mW) 300 VCE = 5V 200 100 1V 100 0 0 100 TSB, SUBSTRATE TEMPERATURE (° C) Fig. 1, Power Derating Curve 200 10 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Gain-Bandwidth Product vs Collector Current 1000 VCE = 1V 0.5 VCE(SAT), COLLECTOR SATURATION VOLTAGE (V) typical limits at TA = 25° C 0.4 hFE, DC CURRENT GAIN IC / IB = 10 150° C TA = 25° C -50° C 0.3 100 0.2 25° C 0.1 150° C -50° C 0 0.1 10 1 10 100 1000 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Sat. Voltage vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4, DC Current Gain vs Collector Current 100 0.35 500 3.2 2.8 IC, COLLECTOR CURRENT (mA) 400 IC, COLLECTOR CURRENT (mA) 2.4 2 1.8 1.6 1.4 1.2 80 0.3 0.25 300 60 0.2 200 0.8 0.6 40 0.15 100 0.4 0.1 20 IB = 0.05mA IB = 0.2mA 0 0 1 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 5, Typical Emitter-Collector Characteristics 2 0 0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6, Typical Emitter-Collector Characteristics 20 DS11107 Rev. 9 - 2 2 of 3 BC817-16/-25/-40 Ordering Information Device* BC817-xx-7 (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. * xx = gain group, e.g. BC817-16-7. Marking Information XXX XXX = Product Type Marking Code (See Page 1), e.g. K6A = BC817-16 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 Feb 2 1999 K March 3 2000 L Apr 4 May 5 2001 M Jun 6 Jul 7 2002 N Aug 8 Sep 9 2003 P Oct O Nov N 2004 R Dec D DS11107 Rev. 9 - 2 YM 3 of 3 BC817-16/-25/-40